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IRF7303 Arkusz danych(PDF) 2 Page - International Rectifier

Numer części IRF7303
Szczegółowy opis  Power MOSFET(Vdss=30V, Rds(on)=0.050ohm)
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Producent  IRF [International Rectifier]
Strona internetowa  http://www.irf.com
Logo IRF - International Rectifier

IRF7303 Arkusz danych(HTML) 2 Page - International Rectifier

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IRF7303
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
30
–––
–––
V
VGS = 0V, ID = 250µA
∆V
(BR)DSS/∆TJ
Breakdown Voltage Temp. Coefficient
––– 0.032 –––
V/°C
Reference to 25°C, ID = 1mA
–––
––– 0.050
VGS = 10V, ID = 2.4A
ƒ
–––
––– 0.080
VGS = 4.5V, ID = 2.0A
ƒ
VGS(th)
Gate Threshold Voltage
1.0
–––
–––
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
5.2
–––
–––
S
VDS = 15V, ID = 2.4A
–––
–––
1.0
VDS = 24V, VGS = 0V
–––
–––
25
VDS = 24V, VGS = 0V, TJ = 125 °C
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-100
VGS = - 20V
Qg
Total Gate Charge
–––
–––
25
ID = 2.4A
Qgs
Gate-to-Source Charge
–––
–––
2.9
nC
VDS = 24V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
7.9
VGS = 10V, See Fig. 6 and 12
ƒ
td(on)
Turn-On Delay Time
–––
6.8
–––
VDD = 15V
tr
Rise Time
–––
21
–––
ID = 2.4A
td(off)
Turn-Off Delay Time
–––
22
–––
RG = 6.0
tf
Fall Time
–––
7.7
–––
RD = 6.2Ω, See Fig. 10
ƒ
Between lead tip
and center of die contact
Ciss
Input Capacitance
–––
520
–––
VGS = 0V
Coss
Output Capacitance
–––
180
–––
pF
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
72
–––
ƒ = 1.0MHz, See Fig. 5
Notes:
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.0
V
TJ = 25°C, IS = 1.8A, VGS = 0V
ƒ
trr
Reverse Recovery Time
–––
47
71
ns
TJ = 25°C, IF = 2.4A
Qrr
Reverse RecoveryCharge
–––
56
84
nC
di/dt = 100A/µs
ƒ
ton
Forward Turn-On Time
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ ISD ≤ 2.4A, di/dt ≤ 73A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
Source-Drain Ratings and Characteristics
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
–––
–––
20
–––
–––
2.5
A
S
D
G
IGSS
IDSS
Drain-to-Source Leakage Current
LS
Internal Source Inductance
–––
6.0
–––
LD
Internal Drain Inductance
–––
4.0
–––
nH
ns
nA
µA
RDS(ON)
Static Drain-to-Source On-Resistance
S
D
G
„ Surface mounted on FR-4 board, t ≤ 10sec.


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