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IRF7452 Arkusz danych(PDF) 2 Page - International Rectifier

Numer części IRF7452
Szczegółowy opis  Power MOSFET(Vdss=100V, Rds(on)max=0.060ohm, Id=4.5A)
Download  8 Pages
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Producent  IRF [International Rectifier]
Strona internetowa  http://www.irf.com
Logo IRF - International Rectifier

IRF7452 Arkusz danych(HTML) 2 Page - International Rectifier

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IRF7452
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Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
3.4
–––
–––
SVDS = 50V, ID = 2.7A
Qg
Total Gate Charge
–––
33
50
ID = 2.7A
Qgs
Gate-to-Source Charge
–––
7.3
11
nC
VDS = 80V
Qgd
Gate-to-Drain ("Miller") Charge
–––
16
24
VGS = 10V,
td(on)
Turn-On Delay Time
–––
9.5
–––
VDD = 50V
tr
Rise Time
–––
11
–––
ID = 2.7A
td(off)
Turn-Off Delay Time
–––
16
–––
RG = 6.0Ω
tf
Fall Time
–––
13
–––
VGS = 10V
Ciss
Input Capacitance
–––
930
–––
VGS = 0V
Coss
Output Capacitance
–––
300
–––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
84
–––
pF
ƒ = 1.0MHz
Coss
Output Capacitance
–––
1370 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Output Capacitance
–––
170
–––
VGS = 0V, VDS = 80V, ƒ = 1.0MHz
Coss eff.
Effective Output Capacitance
–––
280
–––
VGS = 0V, VDS = 0V to 80V
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Parameter
Typ.
Max.
Units
EAS
Single Pulse Avalanche Energy
–––
200
mJ
IAR
Avalanche Current
–––
4.5
A
EAR
Repetitive Avalanche Energy
–––
0.25
mJ
Avalanche Characteristics
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)
–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.3
V
TJ = 25°C, IS = 2.7A, VGS = 0V
trr
Reverse Recovery Time
–––
77
120
ns
TJ = 25°C, IF = 2.7A
Qrr
Reverse RecoveryCharge
–––
270
410
nC
di/dt = 100A/µs
Diode Characteristics
2.3
36
A
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
100
–––
–––
VVGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.11
–––
V/°C
Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
––– 0.060
VGS = 10V, ID = 2.7A
VGS(th)
Gate Threshold Voltage
3.0
–––
5.5
V
VDS = VGS, ID = 250µA
–––
–––
25
µA
VDS = 100V, VGS = 0V
–––
–––
250
VDS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 24V
Gate-to-Source Reverse Leakage
–––
–––
-100
nA
VGS = -24V
IGSS
IDSS
Drain-to-Source Leakage Current
Parameter
Typ.
Max.
Units
RθJA
Maximum Junction-to-Ambient
–––
50
°C/W
Thermal Resistance


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