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IRF7757 Arkusz danych(PDF) 2 Page - International Rectifier |
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IRF7757 Arkusz danych(HTML) 2 Page - International Rectifier |
2 / 9 page IRF7757 2 www.irf.com Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 1.2A, VGS = 0V trr Reverse Recovery Time ––– 20 30 ns TJ = 25°C, IF = 1.2A Qrr Reverse Recovery Charge ––– 10 15 nC di/dt = 100A/µs Source-Drain Ratings and Characteristics A 19 ––– ––– ––– 1.2 ––– Repetitive rating; pulse width limited by max. junction temperature. Notes: Pulse width ≤ 400µs; duty cycle ≤ 2%. Surface mounted on 1 in square Cu board Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 20 ––– ––– VVGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.013 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 35 VGS = 4.5V, ID = 4.8A ––– ––– 40 VGS = 2.5V, ID = 3.8A VGS(th) Gate Threshold Voltage 0.60 ––– 1.2 V VDS = VGS, ID = 250µA gfs Forward Transconductance 11 ––– ––– SVDS = 10V, ID = 4.8A ––– ––– 1.0 VDS = 16V, VGS = 0V ––– ––– 25 VDS = 16V, VGS = 0V, TJ = 70°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 12V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -12V Qg Total Gate Charge ––– 15 23 ID = 4.8A Qgs Gate-to-Source Charge ––– 2.5 ––– nC VDS = 16V Qgd Gate-to-Drain ("Miller") Charge ––– 4.8 ––– VGS = 4.5V td(on) Turn-On Delay Time ––– 9.5 ––– VDD = 10V tr Rise Time ––– 9.2 ––– ID = 1.0A td(off) Turn-Off Delay Time ––– 36 ––– RG = 6.2Ω tf Fall Time ––– 14 ––– VGS = 4.5V Ciss Input Capacitance ––– 1340 ––– VGS = 0V Coss Output Capacitance ––– 180 ––– pF VDS = 15V Crss Reverse Transfer Capacitance ––– 132 ––– ƒ = 1.0MHz Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS µA m Ω RDS(on) Static Drain-to-Source On-Resistance IDSS Drain-to-Source Leakage Current nA ns S D G |
Podobny numer części - IRF7757 |
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Podobny opis - IRF7757 |
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