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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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IRF7807VD2 Arkusz danych(PDF) 1 Page - International Rectifier |
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IRF7807VD2 Arkusz danych(HTML) 1 Page - International Rectifier |
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1 / 9 page  Parameter Max. Units Maximum Junction-to-Ambient S R θJA 50 °C/W Maximum Junction-to-Lead R θJL 20 °C/W Thermal Resistance IRF7807VD2 03/05/01 IRF7807VD2 R DS(on) 17m Ω Q G 9.5nC Q sw 3.4nC Q oss 12nC DEVICE CHARACTERISTICS U SO-8 FETKY™ MOSFET / SCHOTTKY DIODE Top View 8 1 2 3 4 5 6 7 A/S A/S A/S G K/D K/D D K/D K/D • Co-Pack N-channel HEXFET Power MOSFET and Schottky Diode • Ideal for Synchronous Rectifiers in DC-DC Converters Up to 5A Output • Low Conduction Losses • Low Switching Losses • Low Vf Schottky Rectifier Description The FETKY™ family of Co-Pack HEXFETMOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier’s low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO- 8 package is designed for vapor phase, infrared or wave soldering techniques. Parameter Symbol Max. Units Drain-Source Voltage V DS 30 Gate-Source Voltage V GS ±20 Continuous Drain or Source 25°CI D 8.3 Current (V GS ≥ 4.5V) 70°C6.6 A Pulsed Drain Current Q I DM 66 Power Dissipation S 25°CP D 2.5 70°C1.6 Schottky and Body Diode 25°C I F (AV) 3.7 A Average ForwardCurrent T 70°C2.3 Junction & Storage Temperature Range T J, TSTG –55 to 150 °C Absolute Maximum Ratings V W www.irf.com 1 PD-94079 |
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