and Schottky Diode

• Ideal for Synchronous Buck DC-DC

Converters Up to 5A Peak Output

• Low Conduction Losses

• Low Switching Losses

• Low Vf Schottky Rectifier

Dual FETKY™

Co-Packaged Dual MOSFET Plus Schottky Diode

Description

board space saving solution for switching regulator and power management applications. Advanced

for a wide variety of portable electronics applications.

The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple

die capability making it ideal in a variety of power applications. With these improvements, multiple devices can

be used in an application with dramatically reduced board space. Internal connections enable easier board

layout design with reduced stray inductance.

IRF7901D1

PD- 93844B

www.irf.com

1

9/19/01

SO-8

Device Ratings (Max.Values)

Q1

Q2

and Schottky

V

DS

30V

30V

R

38 m

Ω

32 m

Ω

Q

G

10.5 nC

18.3 nC

Q

sw

3.8 nC

9.0 nC

V

SD

1.0V

0.52V

Parameter

Max.

Units

Maximum Junction-to-Ambient

ƒ

R

θJA

62.5

°C/W

Maximum Junction-to-Lead

…

R

θJL

25

°C/W

Thermal Resistance

Absolute Maximum Ratings

Parameter

Symbol

IRF7901D1

Units

Drain-Source Voltage

V

DS

30

V

Gate-Source Voltage

V

GS

±20

Continuous Output

T

I

D

6.2

A

Current (V

Pulsed Drain Current



I

DM

24

Power Dissipation

ƒ

T

P

D

2.0

W

Junction & Storage Temperature Range

T

–55 to 150

°C

Pulsed Source Current



I

SM

12

A

27

18

3

4

6

5

Source

Pwr

Vin

Pwr

Vin

Pwr

Vout

Pwr

Vout

Q1

Gate

Q1

PGND

Gate

Q2

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