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IRF9952 Arkusz danych(PDF) 1 Page - International Rectifier

Numer części IRF9952
Szczegółowy opis  Power MOSFET(Vdss=-30V)
Download  10 Pages
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Producent  IRF [International Rectifier]
Strona internetowa  http://www.irf.com
Logo IRF - International Rectifier

IRF9952 Arkusz danych(HTML) 1 Page - International Rectifier

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N-Channel
P-Channel
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
± 20
TA = 25°C
3.5
-2.3
TA = 70°C
2.8
-1.8
Pulsed Drain Current
IDM
16
-10
Continuous Source Current (Diode Conduction)
IS
1.7
-1.3
TA = 25°C
2.0
TA = 70°C
1.3
Single Pulse Avalanche Energy
EAS
44
57
mJ
Avalanche Current
IAR
2.0
-1.3
A
Repetitive Avalanche Energy
EAR
0.25
mJ
Peak Diode Recovery dv/dt
‚
dv/dt
5.0
-5.0
V/ ns
Junction and Storage Temperature Range
TJ,TSTG
-55 to + 150 °C
PRELIMINARY
HEXFET® Power MOSFET
PD - 9.1561A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
8/25/97
SO-8
l Generation V Technology
l Ultra Low On-Resistance
l Dual N and P Channel MOSFET
l Surface Mount
l Very Low Gate Charge and
Switching Losses
l Fully Avalanche Rated
IRF9952
Description
Thermal Resistance Ratings
Parameter
Symbol
Limit
Units
Maximum Junction-to-Ambient
…
RθJA
62.5
°C/W
Continuous Drain Current
…
Maximum Power Dissipation
…
A
ID
PD
V
W
Symbol
Maximum
Units
D1
N-CH A N NE L M O S F E T
P -C H AN N E L M O SF ET
D1
D2
D2
G1
S2
G2
S1
T o p V iew
8
1
2
3
4
5
6
7
N-Ch P-Ch
VDSS
30V
-30V
RDS(on) 0.10Ω 0.25Ω
Recommended upgrade: IRF7309 or IRF7319
Lower profile/smaller equivalent: IRF7509


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