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IRFB41N15D Arkusz danych(PDF) 2 Page - International Rectifier |
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IRFB41N15D Arkusz danych(HTML) 2 Page - International Rectifier |
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2 / 11 page  IRFB/IRFS/IRFSL41N15D 2 www.irf.com Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 18 ––– ––– S VDS = 50V, ID = 25A Qg Total Gate Charge ––– 72 110 ID = 25A Qgs Gate-to-Source Charge ––– 21 31 nC VDS = 120V Qgd Gate-to-Drain ("Miller") Charge ––– 35 52 VGS = 10V, td(on) Turn-On Delay Time ––– 16 ––– VDD = 75V tr Rise Time ––– 63 ––– ID = 25A td(off) Turn-Off Delay Time ––– 25 ––– RG = 2.5Ω tf Fall Time ––– 14 ––– VGS = 10V Ciss Input Capacitance ––– 2520 ––– VGS = 0V Coss Output Capacitance ––– 510 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 110 ––– pF ƒ = 1.0MHz Coss Output Capacitance ––– 3090 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 230 ––– VGS = 0V, VDS = 120V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 250 ––– VGS = 0V, VDS = 0V to 120V Dynamic @ TJ = 25°C (unless otherwise specified) ns Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 470 mJ IAR Avalanche Current ––– 25 A EAR Repetitive Avalanche Energy ––– 20 mJ Avalanche Characteristics S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 25A, VGS = 0V trr Reverse Recovery Time ––– 170 260 ns TJ = 25°C, IF = 25A Qrr Reverse RecoveryCharge ––– 1.3 1.9 µC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Diode Characteristics 41 164 A Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 150 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.17 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.045 Ω VGS = 10V, ID = 25A VGS(th) Gate Threshold Voltage 3.0 ––– 5.5 V VDS = VGS, ID = 250µA ––– ––– 25 µA VDS = 150V, VGS = 0V ––– ––– 250 VDS = 120V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -30V IGSS IDSS Drain-to-Source Leakage Current Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.75 RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RθJA Junction-to-Ambient ––– 62 RθJA Junction-to-Ambient ––– 40 |
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