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IRFBC40L Arkusz danych(PDF) 2 Page - International Rectifier |
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IRFBC40L Arkusz danych(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRFBC40S/L VDD =50V, starting TJ = 25°C, L =27mH RG = 25Ω, IAS = 6.2A. (See Figure 11) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Notes: ** When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. ISD ≤ 6.2A, di/dt ≤ 80A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Pulse width ≤ 300µs; duty cycle ≤ 2%.
Uses IRFBC40 data and test conditions Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C, IS = 6.2A, VGS = 0V trr Reverse Recovery Time ––– 450 940 ns TJ = 25°C, IF = 6.2A Qrr Reverse Recovery Charge ––– 3.8 7.9 µC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics A Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 600 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.70 ––– V/°C Reference to 25°C, ID =1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 1.2 Ω VGS =10V, ID = 3.7A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 4.7 ––– ––– S VDS = 100V, ID = 3.7A ––– ––– 100 µA VDS = 600V, VGS = 0V ––– ––– 500 VDS = 480V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V Qg Total Gate Charge ––– ––– 60 ID = 6.2A Qgs Gate-to-Source Charge ––– ––– 8.3 nC VDS = 3600V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 30 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 13 ––– VDD = 300V tr Rise Time ––– 18 ––– ID = 6.2A td(off) Turn-Off Delay Time ––– 55 ––– RG = 9.1 Ω tf Fall Time ––– 20 ––– RD = 47Ω, See Fig. 10
Between lead, ––– ––– and center of die contact Ciss Input Capacitance ––– 1300 ––– VGS = 0V Coss Output Capacitance ––– 160 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 30 ––– ƒ = 1.0MHz, See Fig. 5 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS ns IDSS Drain-to-Source Leakage Current nH 7.5 LS Internal Source Inductance 6.2 25 S D G |
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