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IRLI2203G Arkusz danych(PDF) 2 Page - International Rectifier

Numer części IRLI2203G
Szczegółowy opis  Power MOSFET(Vdss=30V, Rds(on)=0.010ohm, Id=52A??
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Producent  IRF [International Rectifier]
Strona internetowa  http://www.irf.com
Logo IRF - International Rectifier

IRLI2203G Arkusz danych(HTML) 2 Page - International Rectifier

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Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
30
–––
–––
V
VGS = 0V, ID = 250µA, TJ >-40°C
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.039 –––
V/°C
Reference to 25°C, ID = 1mA
–––
––– 0.010
VGS = 10V, ID = 31A
–––
––– 0.015
VGS = 5.0V, ID = 26A
VGS(th)
Gate Threshold Voltage
1.0
–––
2.0
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
44
–––
–––
S
VDS = 25V, ID = 55A
–––
–––
25
VDS = 30V, VGS = 0V
–––
–––
250
VDS = 24V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 10V
Gate-to-Source Reverse Leakage
–––
–––
-100
VGS = -10V
–––
–––
85
ID= 46A, VDS= 24V, VGS= 5.0V
–––
–––
150
ID= 55A
Qgs
Gate-to-Source Charge
–––
–––
23
VDS = 24V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
36
VGS = 10V, See Fig. 6 and 13
td(on)
Turn-On Delay Time
–––
9.1
–––
VDD = 15V
tr
Rise Time
–––
110
–––
ID = 55A
td(off)
Turn-Off Delay Time
–––
110
–––
RG = 5.0Ω
tf
Fall Time
–––
100
–––
RD = 0.26Ω, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
Ciss
Input Capacitance
––– 3700 –––
VGS = 0V
Coss
Output Capacitance
––– 1700 –––
pF
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
310
–––
ƒ = 1.0MHz, See Fig. 5
C
Drain to Sink Capacitance
–––
12
–––
pF
ƒ = 1.0MHz
IRLI2203G
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IDSS
Drain-to-Source Leakage Current
IGSS
RDS(on)
Static Drain-to-Source On-Resistance
µA
nA
nH
ns
LD
Internal Drain Inductance
–––
4.5
–––
LS
Internal Source Inductance
–––
7.5
–––
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.6
V
TJ = 25°C, IS = 31A, VGS = 0V
trr
Reverse Recovery Time
–––
59
89
ns
TJ = 25°C, IF = 55A
Qrr
Reverse RecoveryCharge
–––
0.11 0.17
µC
di/dt = 100A/µs
ton
Forward Turn-On Time
Source-Drain Ratings and Characteristics
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
–––
–––
210
–––
–––
52
A
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD ≤ 55A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
t=60s, ƒ=60Hz
Qg
Total Gate Charge
nC
VDD = 25V, starting TJ = 25°C, L = 20µH
RG = 25Ω, IAS = 55A. (See Figure 12)
Pulse width
≤ 300µs; duty cycle ≤ 2%.
Caculated continuous current based on maximum allowable junction temperature;
for recomended current-handling of the package refer to Design Tip # 93-4
Next Data Sheet
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