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IRLML5203 Arkusz danych(PDF) 1 Page - International Rectifier

Numer części IRLML5203
Szczegółowy opis  Power MOSFET(Vdss=-30V)
Download  9 Pages
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Producent  IRF [International Rectifier]
Strona internetowa  http://www.irf.com
Logo IRF - International Rectifier

IRLML5203 Arkusz danych(HTML) 1 Page - International Rectifier

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Parameter
Max.
Units
VDS
Drain- Source Voltage
-30
V
ID @ TA = 25°C
Continuous Drain Current, VGS @ -10V
-3.0
ID @ TA= 70°C
Continuous Drain Current, VGS @ -10V
-2.4
A
IDM
Pulsed Drain Current

-24
PD @TA = 25°C
Power Dissipation
1.25
PD @TA = 70°C
Power Dissipation
0.80
Linear Derating Factor
10
mW/°C
VGS
Gate-to-Source Voltage
± 20
V
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
8/28/00
Parameter
Max.
Units
RθJA
Maximum Junction-to-Ambient
ƒ
100
°C/W
Thermal Resistance
Absolute Maximum Ratings
W
www.irf.com
1
IRLML5203
HEXFET® Power MOSFET
These P-channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This
benefit provides the designer with an extremely efficient
device for use in battery and load management
applications.
A thermally enhanced large pad leadframe has been
incorporated into the standard SOT-23 package to
produce a HEXFET Power MOSFET with the industry's
smallest footprint. This package, dubbed the Micro3TM,
is ideal for applications where printed circuit board
space is at a premium. The low profile (<1.1mm) of
the Micro3 allows it to fit easily into extremely thin
application environments such as portable electronics
and PCMCIA cards. The thermal resistance and
power dissipation are the best available.
Description
l Ultra Low On-Resistance
l
P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Low Gate Charge
PD - 93967
VDSS
RDS(on) max (mΩ)
Ω)
Ω)
Ω)
Ω)
ID
-30V
98@VGS = -10V
-3.0A
165@VGS = -4.5V
-2.6A
S
G 1
2
D
3
Micro3TM
PROVISIONAL


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