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JANTX2N6804 Dane(HTML) 2 Page - International Rectifier

Numer części JANTX2N6804
Szczegółowy opis  POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-11A)
Pobierz  6 Pages
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Producent  IRF [International Rectifier]
Strona internetowa  http://www.irf.com
Logo IRF - International Rectifier

JANTX2N6804 Datasheet(Arkusz danych) 2 Page - International Rectifier

  JANTX2N6804 Datasheet HTML 1Page - International Rectifier JANTX2N6804 Datasheet HTML 2Page - International Rectifier JANTX2N6804 Datasheet HTML 3Page - International Rectifier JANTX2N6804 Datasheet HTML 4Page - International Rectifier JANTX2N6804 Datasheet HTML 5Page - International Rectifier JANTX2N6804 Datasheet HTML 6Page - International Rectifier  
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Thermal Resistance
Parameter
Min. Typ. Max. Units
Test Conditions
RthJC
Junction-to-Case
1.67
RthJA
Junction-to-Ambient
30
K/W
Typical socket mount
Source-Drain Diode Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Test Conditions
IS
Continuous Source Current (Body Diode)
-11
Modified MOSFET symbol showing the
ISM
Pulse Source Current (Body Diode) Œ
-50
integral reverse p-n junction rectifier.
VSD
Diode Forward Voltage
-4.7
V
Tj = 25°C, IS = -11A, VGS = 0V 
trr
Reverse Recovery Time
250
ns
Tj = 25°C, IF = -11A, di/dt ≤ -100A/µs
QRR
Reverse Recovery Charge
3.0
µCVDD ≤ -50V 
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min.
Typ. Max. Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
-100
V
VGS = 0V, ID = -1.0 mA
∆BVDSS/∆TJ Temperature Coefficient of Breakdown
-0.087
V/°C
Reference to 25°C, ID = -1.0 mA
Voltage
RDS(on)
Static Drain-to-Source
0.30
VGS = -10V, ID = -7A
On-State Resistance
0.35
VGS = -10V, ID = -11A
VGS(th)
Gate Threshold Voltage
-2.0
-4.0
V
VDS = VGS, ID = -250µA
gfs
Forward Transconductance
3
S ( )VDS > -15V, IDS = -7A 
IDSS
Zero Gate Voltage Drain Current
-25
VDS = 0.8 x Max Rating,VGS = 0V
-250
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
-100
VGS = -20V
IGSS
Gate-to-Source Leakage Reverse
100
VGS = 20V
Qg
Total Gate Charge
1.5
29
VGS = -10V, ID = -11A
Qgs
Gate-to-Source Charge
1.0
7.1
VDS = Max. Rating x 0.5
Qgd
Gate-to-Drain (“Miller”) Charge
2.0
21
see figures 6 and 13
td(on)
Turn-On Delay Time
60
VDD = -50V, ID = -11A,
tr
Rise Time
140
RG = 7.5Ω, VGS = -10V
td(off)
Turn-Off Delay Time
140
tf
Fall Time
140
see figure 10
LD
Internal Drain Inductance
5.0
LS
Internal Source Inductance
13
Ciss
Input Capacitance
860
VGS = 0V, VDS = -25V
Coss
Output Capacitance
350
f = 1.0 MHz
Crss
Reverse Transfer Capacitance
125
see figure 5
JANTX2N6804, JANTXV2N6804 Device

µA
nC
pF
nH
ns
Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
Modified MOSFET
symbol showing the
internal inductances.
nA
A
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