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SB120 Arkusz danych(PDF) 1 Page - Compact Technology Corp. |
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SB120 Arkusz danych(HTML) 1 Page - Compact Technology Corp. |
1 / 2 page SB120 thru SB1200 FEATURES Metal-Semiconductor junction with guard ring Low forward voltage drop High current capability The plastic material carries UL recognition 94V-0 For use in low voltage,high frequency inverters,free wheeling,and polarity protection applications MECHANICAL DATA Case : JEDEC DO-41 molded plastic Polarity : Color band denotes cathode Weight : 0.318 grams Mounting position : Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20% SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE - 20 to 200 Volts FORWARD CURRENT - 1.0 Amperes All Dimensions in millimeter Max. Min. DO-41 Dim. A D C B 25.4 5.20 - 4.20 0.70 2.00 2.70 0.90 DO-41 A C D A B Epitaxial construction CTC0074 Ver. 2.0 1 of 2 SB120 thru SB1200 PARAMETER SYMBOL SB 120 SB 130 SB 14 0 SB 150 SB 160 SB 180 SB 1100 SB 1150 SB 1200 UNIT Maximum repetitive peak reverse voltage VRRM 20 30 40 50 60 80 100 150 200 V Maximum RMS voltage VRM S 14 21 28 35 42 56 70 105 140 V Maximum DC blocking voltage VDC 20 30 40 50 60 80 100 150 200 V Maximum average forward rectified current IF A Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load Maximum Instantaneous Forward Voltage @ 1.0A VF 0.87 0.90 V Maximum DC Reverse Current @ TA=25°C at Rated DC Blocking Voltage @ TA=100°C Typical Junction Capacitance CJ pF Typical Thermal Resistance R JA °C/W Operating Temperature Range TJ °C Storage Temperature Range TSTG °C 1.0 IFSM 30.0 2.0 10.0 A 0.50 0.85 IR 0.5 0.2 mA -55 to +150 0.70 70 70 50 40 30 -55 to +125 |
Podobny numer części - SB120_15 |
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Podobny opis - SB120_15 |
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