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LDTA123YET1G Arkusz danych(PDF) 1 Page - Leshan Radio Company

Numer części LDTA123YET1G
Szczegółowy opis  Bias Resistor Transistor
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Producent  LRC [Leshan Radio Company]
Strona internetowa  http://www.lrc.cn/
Logo LRC - Leshan Radio Company

LDTA123YET1G Arkusz danych(HTML) 1 Page - Leshan Radio Company

  LDTA123YET1G_15 Datasheet HTML 1Page - Leshan Radio Company LDTA123YET1G_15 Datasheet HTML 2Page - Leshan Radio Company LDTA123YET1G_15 Datasheet HTML 3Page - Leshan Radio Company  
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background image
3
COLLECTOR
2
EMITTER
1
BASE
R1
R2
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
R1 (K)
R2 (K)
Shipping
P8
2.2
10
3000/Tape & Reel
LESHAN RADIO COMPANY, LTD.
1/3
10000/Tape & Reel
We declare that the material of product compliance with
RoHS requirements.
LDTA123YET1G
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
Inverter, Interface, Driver
Features
Applications
Absolute maximum ratings (Ta=25
°C)
Limits
Parameter
Symbol
VCC
−50
−12 to +5
−100
−100
150
150
−55 to +150
LDTA123YET1G
V
V
mA
mW
°C
°C
VIN
IO
IC(Max.)
PD
Tj
Tstg
Unit
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
Electrical characteristics (Ta=25
°C)
Parameter
Symbol
VI(off)
VI(on)
VO(on)
II
IO(off)
R1
GI
R2/R1
fT
Min.
−3
1.54
33
3.6
−0.1
2.2
4.5
250
−0.3
−0.3
−3.8
−0.5
2.86
5.5
V
VCC
=−5V, IO=−100µA
VO
=−0.3V, IO=−20mA
IO/II
=−10mA/−0.5mA
VI
=−5V
VCC
=−50V, VI=0V
VO
=−5V, IO=−10mA
VCE
=−10V, IE=5mA, f=100MHz
V
mA
µA
k
−−
MHz
Typ.
Max.
Unit
Conditions
Input voltage
Output voltage
Input current
Output current
Input resistance
DC current gain
Resistance ratio
Transition frequency
Characteristics of built-in transistor
LDTA123YET1G
LDTA123YET3G
2.2
10
P8
1
2
3
SC-89


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