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SD103BWS Arkusz danych(PDF) 1 Page - Vishay Siliconix |
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SD103BWS Arkusz danych(HTML) 1 Page - Vishay Siliconix |
1 / 5 page SD103AWS, SD103BWS, SD103CWS www.vishay.com Vishay Semiconductors Rev. 1.9, 25-Feb-13 1 Document Number: 85682 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Small Signal Schottky Diodes MECHANICAL DATA Case: SOD-323 Weight: approx. 4.3 mg Packaging codes/options: 18/10K per 13” reel (8 mm tape), 10K/box 08/3K per 7” reel (8 mm tape), 15K/box FEATURES • The SD103 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, and coupling diodes for fast switching and low logic level applications • For general purpose applications • AEC-Q101 qualified • Base P/N-E3 - RoHS-compliant, commercial grade • Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 Note (1) Valid provided that electrodes are kept at ambient temperature Note (1) Valid provided that electrodes are kept at ambient temperature PARTS TABLE PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS SD103AWS SD103AWS-E3-08 or SD103AWS-E3-18 Single diode S6 Tape and reel SD103AWS-HE3-08 or SD103AWS-HE3-18 SD103BWS SD103BWS-E3-08 or SD103BWS-E3-18 Single diode S7 SD103BWS-HE3-08 or SD103BWS-HE3-18 SD103CWS SD103CWS-E3-08 or SD103CWS-E3-18 Single diode S8 SD103CWS-HE3-08 or SD103CWS-HE3-18 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT Repetitive peak reverse voltage SD103AWS VRRM 40 V SD103BWS VRRM 30 V SD103CWS VRRM 20 V Forward continuous current (1) IF 350 mA Power dissipation (1) Ptot 200 mW Single cycle surge 10 μs square wave IFS;M 2A THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Thermal resistance junction to ambient air (1) RthJA 500 K/W Junction temperature Tj 125 °C Operating temperature range Top - 55 to + 125 °C Storage temperature range Tstg - 55 to + 150 °C |
Podobny numer części - SD103BWS |
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Podobny opis - SD103BWS |
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