SS8P5C, SS8P6C

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Vishay General Semiconductor

Revision: 16-Jan-14

3

Document Number: 89028

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 1 - Maximum Forward Current Derating Curve

Fig. 2 - Forward Power Loss Characteristics Per Diode

Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode

Fig. 4 - Typical Reverse Leakage Characteristics Per Diode

Fig. 5 - Typical Junction Capacitance Per Diode

Fig. 6 - Typical Transient Thermal Impedance Per Diode

0

2

4

6

8

10

0

25

50

75

100

125

150

175

Lead Temperature (°C)

Resistive or Inductive Load

T

at the Cathode Band Terminal

0

1.0

0.5

1.5

2.0

2.5

3.0

0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

Average Forward Current (A)

D = 0.1

D = 0.2

D = 0.3 D = 0.5 D = 0.8

D = 1.0

D = t

t

p

T

0.01

0.1

1

10

100

0.2

0

0.4

0.6

0.8

1.0

1.2

Instantaneous Forward Voltage (V)

T

T

T

0.1

1

10

100

1000

10 000

10

20

30

40

50

60

70

80

90

100

Percent of Rated Peak Reverse Voltage (%)

T

T

T

10

1000

100

0.1

1

10

100

Reverse Voltage (V)

T

f = 1.0 MHz

V

0.01

0.1

1

10

100

1

10

100

t - Pulse Duration (s)

Junction to Ambient