BAT86S_15 datasheet(2/4 Pages) VISHAY

Numer części	BAT86S

Szczegółowy opis	Small Signal Schottky Diode

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BAT86S

www.vishay.com

Vishay Semiconductors

Rev. 1.9, 06-May-13

2

Document Number: 85514

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 1 - Max. Reverse Power Dissipation vs.

Junction Temperature

Fig. 2 - Reverse Current vs. Junction Temperature

Fig. 3 - Forward Current vs. Forward Voltage

Fig. 4 - Diode Capacitance vs. Reverse Voltage

PACKAGE DIMENSIONS in millimeters (inches): DO-35

15827

0

50

100

150

200

250

300

350

400

450

500

25

50

75

100

125

150

Tj - Junction Temperature (°C)

- Limit

at 100 % V

P

R

- Limit

at 80 % V

P

R

RthJA = 540 K/W

VR = 50 V

1

10

100

1000

10000

25

50

75

100

125

150

15828

Tj - Junction Temperature (°C)

VR = VRRM

15829

0

0.5

1.0

1.5

0.1

1

10

100

1000

VF - Forward Voltage (V)

Tj = 25 °C

Tj = 125 °C

15830

0

1

2

3

4

5

6

7

8

9

10

0.1

1

10

100

f = 1 MHz

VR - Reverse Voltage (V)

94 9366

Rev. 6 - Date: 19. December 2011

Document no.: SB-V-3906.04-031(4)

26 min. [1.024]

3.9 max. [0.154]

26 min. [1.024]

3.1 min. [0.120]

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