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BC807-16 Arkusz danych(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

Numer części BC807-16
Szczegółowy opis  0.3 Watts, PNP Plastic-Encasulate Transistor
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Producent  TSC [Taiwan Semiconductor Company, Ltd]
Strona internetowa  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

BC807-16 Arkusz danych(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

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- For switching, AF driver and amplifer applications
- Complementary NPN type available (BC817)
- Case: SOT- 23, Molded plastic
- Terminal: Solderable per MIL-STD-202, method 208
- Case material: Molded plastic, UL flammability
classification rating 94V-0
- Moisture sensitivity: Level 1 per J-STD-020C
- Lead free plating
SOT-23
- Weight: 0.008grams (approximately)
SYMBOL
UNIT
PD
W
IC
A
TJ
°C
TSTG
°C
SYMBOL
UNIT
Collector-Base Breakdown Voltage
IC = -10 µA
IE = 0
VCBO
V
Collector-Emitter Breakdown Voltage
IC = -10 mA
IB = 0
VCEO
V
IE = -1 µA
IC = 0
VEBO
V
VCB = -45 V
IE = 0
µ
A
VCB = -40 V
IB = 0
µ
A
Emitter Cut-off Current
VEB = -4 V
IC = 0
IEBO
µ
A
IB = 50 mA
VCE(sat)
V
IB = 50 mA
VBE(sat)
V
Transition Frequency
VCE = -5 V IC = -10 mA f = 50MHz
fT
MHz
Document Number: DS_S1404007
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
BC807-16/-25/-40
MECHANICAL DATA
FEATURES
0.3
- Ideally suited for automatic insertion
- Epitaxial planar die construction
Taiwan Semiconductor
VALUE
Small Signal Product
0.3 Watts, PNP Plastic-Encasulate Transistor
PARAMETER
250
-0.5
-55 to + 150
Power Dissipation
Collector Current - Continuous
Storage Temperature Range
PARAMETER
100
DC Current Gain
807-16
807-25
807-40
160
400
250
600
ICBO
-0.1
-0.2
Version: F14
Collector Cut-off Current
Emitter-Base Breakdown Voltage
-5
VCE = -1 V IC = -100 mA
VALUE
hFE(1)
Collector-Emitter Saturation Voltage
at IC = -500mA
-0.1
-0.7
80
Junction Temperature
150
Base-Emitter Saturation Voltage
at IC = -500 mA
-1.2
-50
-45


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