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BC807-16 Arkusz danych(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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BC807-16 Arkusz danych(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 5 page - For switching, AF driver and amplifer applications - Complementary NPN type available (BC817) - Case: SOT- 23, Molded plastic - Terminal: Solderable per MIL-STD-202, method 208 - Case material: Molded plastic, UL flammability classification rating 94V-0 - Moisture sensitivity: Level 1 per J-STD-020C - Lead free plating SOT-23 - Weight: 0.008grams (approximately) SYMBOL UNIT PD W IC A TJ °C TSTG °C SYMBOL UNIT Collector-Base Breakdown Voltage IC = -10 µA IE = 0 VCBO V Collector-Emitter Breakdown Voltage IC = -10 mA IB = 0 VCEO V IE = -1 µA IC = 0 VEBO V VCB = -45 V IE = 0 µ A VCB = -40 V IB = 0 µ A Emitter Cut-off Current VEB = -4 V IC = 0 IEBO µ A IB = 50 mA VCE(sat) V IB = 50 mA VBE(sat) V Transition Frequency VCE = -5 V IC = -10 mA f = 50MHz fT MHz Document Number: DS_S1404007 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) BC807-16/-25/-40 MECHANICAL DATA FEATURES 0.3 - Ideally suited for automatic insertion - Epitaxial planar die construction Taiwan Semiconductor VALUE Small Signal Product 0.3 Watts, PNP Plastic-Encasulate Transistor PARAMETER 250 -0.5 -55 to + 150 Power Dissipation Collector Current - Continuous Storage Temperature Range PARAMETER 100 DC Current Gain 807-16 807-25 807-40 160 400 250 600 ICBO -0.1 -0.2 Version: F14 Collector Cut-off Current Emitter-Base Breakdown Voltage -5 VCE = -1 V IC = -100 mA VALUE hFE(1) Collector-Emitter Saturation Voltage at IC = -500mA -0.1 -0.7 80 Junction Temperature 150 Base-Emitter Saturation Voltage at IC = -500 mA -1.2 -50 -45 |
Podobny numer części - BC807-16 |
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Podobny opis - BC807-16 |
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