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TSC5303D Arkusz danych(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

Numer części TSC5303D
Szczegółowy opis  High Voltage NPN Transistor with Diode
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Producent  TSC [Taiwan Semiconductor Company, Ltd]
Strona internetowa  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

TSC5303D Arkusz danych(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

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TSC5303D
High Voltage NPN Transistor with Diode
2/6
Version: C14
Thermal Performance
Parameter
Symbol
Limit
Unit
Thermal Resistance - Junction to Case
JC
4.15
oC/W
Thermal Resistance - Junction to Ambient
JA
75
oC/W
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Collector-Base Voltage
IC =1mA, IB =0
BVCBO
700
--
--
V
Collector-Emitter Breakdown Voltage
IC =10mA, IE =0
BVCEO
400
--
--
V
Emitter-Base Breakdown Voltage
IE =1mA, IC =0
BVEBO
9
--
--
V
Collector Cutoff Current
VCB =700V, IE =0
ICBO
--
--
10
µA
Collector Cutoff Current
VCE =400V, IB =0
ICEO
--
--
10
µA
Emitter Cutoff Current
VEB =7V, IC =0
IEBO
--
--
10
µA
Collector-Emitter Saturation Voltage
IC =0.4A, IB =0.1A
VCE(SAT)1
--
0.10
0.7
V
IC =1A, IB =0.25A
VCE(SAT)2
--
0.17
1
IC =2A, IB =0.5A
VCE(SAT)3
--
0.55
--
Base-Emitter Saturation Voltage
IC =1A, IB =0.25A
VBE(SAT)1
--
--
1.1
V
IC =2A, IB =0.5A
VBE(SAT)2
--
--
1.2
DC Current Gain
VCE =5V, IC =10mA
hFE
10
--
--
VCE =5V, IC =1A
15
--
30
VCE =5V, IC =2A
5
--
--
Forward Voltage Drop
IF =2A
Vf
--
--
2
V
Turn On Time
VCC =250V, IC =1A,
IB1=IB2=0.2A, tp=25µs
Duty Cycle<1%
tON
--
0.2
0.6
µs
Storage Time
tSTG
--
2.7
4.5
µs
Fall Time
tf
--
0.16
0.3
µs
Note: Pulsed duration =380µs, duty cycle ≤2%


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