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TSC5303D Arkusz danych(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TSC5303D Arkusz danych(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
2 / 6 page TSC5303D High Voltage NPN Transistor with Diode 2/6 Version: C14 Thermal Performance Parameter Symbol Limit Unit Thermal Resistance - Junction to Case RӨJC 4.15 oC/W Thermal Resistance - Junction to Ambient RӨJA 75 oC/W Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Collector-Base Voltage IC =1mA, IB =0 BVCBO 700 -- -- V Collector-Emitter Breakdown Voltage IC =10mA, IE =0 BVCEO 400 -- -- V Emitter-Base Breakdown Voltage IE =1mA, IC =0 BVEBO 9 -- -- V Collector Cutoff Current VCB =700V, IE =0 ICBO -- -- 10 µA Collector Cutoff Current VCE =400V, IB =0 ICEO -- -- 10 µA Emitter Cutoff Current VEB =7V, IC =0 IEBO -- -- 10 µA Collector-Emitter Saturation Voltage IC =0.4A, IB =0.1A VCE(SAT)1 -- 0.10 0.7 V IC =1A, IB =0.25A VCE(SAT)2 -- 0.17 1 IC =2A, IB =0.5A VCE(SAT)3 -- 0.55 -- Base-Emitter Saturation Voltage IC =1A, IB =0.25A VBE(SAT)1 -- -- 1.1 V IC =2A, IB =0.5A VBE(SAT)2 -- -- 1.2 DC Current Gain VCE =5V, IC =10mA hFE 10 -- -- VCE =5V, IC =1A 15 -- 30 VCE =5V, IC =2A 5 -- -- Forward Voltage Drop IF =2A Vf -- -- 2 V Turn On Time VCC =250V, IC =1A, IB1=IB2=0.2A, tp=25µs Duty Cycle<1% tON -- 0.2 0.6 µs Storage Time tSTG -- 2.7 4.5 µs Fall Time tf -- 0.16 0.3 µs Note: Pulsed duration =380µs, duty cycle ≤2% |
Podobny numer części - TSC5303D_14 |
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Podobny opis - TSC5303D_14 |
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