BAP63-03 datasheet(2/2 Pages) LRC

Numer części	BAP63-03

Szczegółowy opis	Silicon PIN diode

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Producent	LRC [Leshan Radio Company]

Strona internetowa	http://www.lrc.cn/

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LESHAN RADIO COMPANY, LTD.

S25–2/2

BAP63-03

10

1

10 -1

04

8

12

16

20

I F (mA )

500

400

300

200

100

0

10 -1

1

10

10 2

V R ( V )

f = 100 MHz; T

j =25°C

f = 1 MHz; T

j =25°C

ELECTRICAL CHARACTERISTICS T j = 25°C unless otherwise specified. (Continue)

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

τ

L

charge carrier life time

when switched from I F =10 mA to

310

–

n s

I R = 6 mA; R L = 100

Ω;

measured at I R =3 mA

L S

series inductance

1.5

–

nH

Note

1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.

THERMALCHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-s

thermal resistance from junction to soldering-point

120

K/W

0

- 10

- 20

- 30

- 40

f (GHz )

0

-0.1

-0.2

-0.3

-0.4

-0.5

01

2

3

f (GHz )

Fig.1 Forward resistance as a function of

forward current; typical values.

Fig.2 Diode capacitance as a function of

reverse voltage; typical values.

Fig.3 Insertion loss ( |s

21|

2 )of the diode in on-state

as a function of frequency; typical values.

Diode inserted in series with a 50

Ω stripline circuit and

biased via the analyzer Tee network.

Tamb =25°C.

Fig.4 Isolation ( |s

21|

2 ) of the diode in off-state as a

function of frequency; typical values.

Diode zero biased and inserted in

series with a 50

Ω stripline circuit.

Tamb =25°C.

(1) I

F =100 mA.

(2) I

F =10 mA.

(3) I

F = 1 mA.

(4) I

F = 0.5 mA.

01

2

3

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