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STB458D Arkusz danych(PDF) 1 Page - SamHop Microelectronics Corp. |
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STB458D Arkusz danych(HTML) 1 Page - SamHop Microelectronics Corp. |
1 / 11 page S mHop Microelectronics C orp. a 8 80 °C/W THERMAL CHARACTERISTICS °C/W ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient R JC R JA Ver 1.0 www.samhop.com.tw Apr,23,2010 1 STB458D Green Product D1/D2 S1 G1 S2 G2 D1/D2 Dual Enhancement Mode Field Effect Transistor (N and P Channel) N-ch P -ch G 1 D1 S 1 G 2 D2 S 2 PRODUCT SUMMARY (N-Channel) VDSS ID RDS(ON) (m Ω) Max 40V 30A 14 @ VGS=4.5V 10.5 @ VGS=10V PRODUCT SUMMARY (P-Channel) VDSS ID RDS(ON) (m Ω) Max -40V -24A 24 @ VGS=-4.5V 17 @ VGS=-10V Symbol VDS VGS IDM EAS W A PD °C 15.6 -55 to 150 ID Units Parameter 40 30 68 V V ±20 TC=25°C Gate-Source Voltage Drain-Source Voltage mJ N-Channel Drain Current-Continuous a -Pulsed b A Sigle Pulse Avalanche Energy d Maximum Power Dissipation a Operating Junction and Storage Temperature Range TJ, TSTG TC=25°C -40 -24 -60 ±20 P-Channel TC=70°C A 23.7 -19 10 W TC=70°C 210 170 STB SERIES TO-263 5L |
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