STF8236 datasheet(2/6 Pages) SAMHOP

Numer części	STF8236

Szczegółowy opis	Super high dense cell design for low RDS(ON).

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Producent	SAMHOP [SamHop Microelectronics Corp.]

Strona internetowa	http://www.samhop.com.tw

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2 / 6 page

Symbol

Min

Typ

Max

Units

BVDSS

20

V

1

IGSS

±1

uA

VGS(th)

0.5

V

m ohm

VGS=4.5V , ID=3.0A

RDS(ON)

Drain-Source On-State Resistance

IDSS

uA

Gate Threshold Voltage

VDS=VGS ,ID=1.0mA

VDS=16V , VGS=0V

VGS=±8V ,VDS=0V

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)

OFF CHARACTERISTICS

Parameter

Conditions

Drain-Source Breakdown Voltage

VGS=0V,ID=250uA

ON CHARACTERISTICS

STF8236

Ver 1.0

0.7

1.5

gFS

20

S

Qg

11

nC

19

nC

Qgs

36

nC

Qgd

21

tD(ON)

6.3

ns

tr

0.83

ns

tD(OFF)

3.4

ns

tf

ns

Gate-Drain Charge

SWITCHING CHARACTERISTICS

Gate-Source Charge

VDD=16V

ID=3A

VGS=4.5V

RGEN= 6 ohm

Total Gate Charge

Rise Time

Turn-Off Delay Time

Fall Time

Turn-On Delay Time

VDS=5V , ID=3A

Forward Transconductance

VGS=4.0V , ID=3.0A

m ohm

b

VDS=16V,ID=6A,

VGS=4.5V

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

VSD

Diode Forward Voltage

VGS=0V,IS=6A

0.86

1.2

V

www.samhop.com.tw

Oct,24,2014

2

17.5

22.0

18.0

22.5

VGS=3.7V , ID=3.0A

m ohm

VGS=2.5V , ID=1.5A

m ohm

22.0

29.0

14.0

14.5

17.5

VGS=3.1V , ID=3.0A

m ohm

19.5

25.0

15.5

18.5

23.0

15.0

Notes

a.Pulse Test:Pulse Width < 10us, Duty Cycle < 1%.

b.Guaranteed by design, not subject to production testing.

c.Drain current limited by maximum junction temperature.

d.Mounted on FR4 Board of 1 inch2 ,2oz.

_

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