STP656F datasheet(2/7 Pages) SAMHOP

Numer części	STP656F

Szczegółowy opis	Super high dense cell design for low RDS(ON).

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Producent	SAMHOP [SamHop Microelectronics Corp.]

Strona internetowa	http://www.samhop.com.tw

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2 / 7 page

Symbol

Min

Typ

Max

Units

BVDSS

60

V

1

IGSS

±100

nA

VGS(th)

V

gFS

S

CISS

pF

COSS

pF

CRSS

pF

Qg

nC

tD(ON)

ns

tr

ns

tD(OFF)

ns

tf

ns

VDS=25V,VGS=0V

SWITCHING CHARACTERISTICS

VDD=30V

ID=1A

VGS=10V

RGEN=6ohm

Total Gate Charge

Rise Time

Turn-Off Delay Time

Fall Time

Turn-On Delay Time

m ohm

VGS=10V , ID=11A

VDS=20V , ID=11A

Input Capacitance

Output Capacitance

DYNAMIC CHARACTERISTICS

RDS(ON)

Drain-Source On-State Resistance

Forward Transconductance

IDSS

uA

Gate Threshold Voltage

VDS=VGS ,ID=250uA

VDS=48V , VGS=0V

VGS=±20V,VDS=0V

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)

OFF CHARACTERISTICS

Parameter

Conditions

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

Reverse Transfer Capacitance

ON CHARACTERISTICS

VGS=4.5V , ID=9A

m ohm

c

f=1.0MHz

c

STP656F

www.samhop.com.tw

Dec,01,2010

2

VSD

nC

Qgs

nC

Qgd

Gate-Drain Charge

Gate-Source Charge

Diode Forward Voltage

VDS=30V,ID=11A,

VGS=10V

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

VGS=0V,IS=2A

V

Notes

nC

VDS=30V,ID=11A,VGS=10V

VDS=30V,ID=11A,VGS=4.5V

a.Surface Mounted on FR4 Board,t < 10sec.

b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.

c.Guaranteed by design, not subject to production testing.

d.Starting TJ=25°C,L=0.5mH,VDD = 30V.(See Figure13)

_

1

Ver 1.0

15

2180

196

132

40

47

65

37

34

19

21

29

4

9

0.76

1.3

17

1

1.8

3

31

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