2N2218 datasheet(1/3 Pages) CENTRAL

Numer części	2N2218

Szczegółowy opis	SILICON NPN TRANSISTORS

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Producent	CENTRAL [Central Semiconductor Corp]

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2N2218

2N2218A

SILICON

NPN TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N2218 and

2N2218A are silicon NPN transistors manufactured by

the epitaxial planar process, and designed for small

signal general purpose and switching applications.

MARKING: FULL PART NUMBER

MAXIMUM RATINGS: (TA=25°C unless otherwise noted)

SYMBOL

2N2218

2N2218A

UNITS

Collector-Base Voltage

VCBO

60

75

V

Collector-Emitter Voltage

VCEO

30

40

V

Emitter-Base Voltage

VEBO

5.0

6.0

V

Continuous Collector Current

IC

800

mA

Power Dissipation

PD

800

mW

Power Dissipation (TC=25°C)

PD

3.0

W

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +200

°C

ELECTRICAL CHARACTERISTICS: (TA=25°C)

2N2218

2N2218A

SYMBOL

TEST CONDITIONS

MIN

MAX

MIN

MAX

UNITS

ICBO

VCB=50V

-

10

-

nA

ICBO

VCB=60V

-

10

nA

ICEV

VCE=60V, VEB=3.0V

-

10

nA

IEBO

VEB=3.0V

-

10

-

10

nA

BVCBO

IC=10μA

60

-

75

-

V

BVCEO

IC=10mA

30

-

40

-

V

BVEBO

IE=10μA

5.0

-

6.0

-

V

VCE(SAT)

IC=150mA, IB=15mA

-

0.4

-

0.3

V

VCE(SAT)

IC=500mA, IB=50mA

-

1.6

-

1.0

V

VBE(SAT)

IC=150mA, IB=15mA

-

1.3

-

1.2

V

VBE(SAT)

IC=500mA, IB=50mA

-

2.6

-

2.0

V

hFE

VCE=10V, IC=100μA

20

-

20

-

hFE

VCE=10V, IC=1.0mA

25

-

25

-

hFE

VCE=10V, IC=10mA

35

-

35

-

hFE

VCE=10V, IC=150mA

40

120

40

120

hFE

VCE=1.0V, IC=150mA

20

-

20

-

hFE

VCE=10V, IC=500mA

20

-

hFE

VCE=10V, IC=500mA

-

25

-

TO-39 CASE

R1 (31-July 2013)

www.centr a lsemi.com

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