2N3054 datasheet(1/2 Pages) CENTRAL

Numer części	2N3054

Szczegółowy opis	SILICON NPN POWER TRANSISTORS

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Producent	CENTRAL [Central Semiconductor Corp]

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MAXIMUM RATINGS: (TC=25°C)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

90

V

Collector-Emitter Voltage

VCEV

90

V

Collector-Emitter Voltage

VCER

60

V

Collector-Emitter Voltage

VCEO

55

V

Emitter-Base Voltage

VEBO

7.0

V

Continuous Collector Current

IC

4.0

A

Continuous Base Current

IB

2.0

A

Power Dissipation (2N3054)

PD

25

W

Power Dissipation (2N3054A)

PD

75

W

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +200

°C

Thermal Resistance (2N3054)

JC

7.0

°C/W

Thermal Resistance (2N3054A)

JC

2.33

°C/W

ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICEV

VCE=90V, VEB=1.5V

1.0

mA

ICEV

VCE=90V, VEB=1.5V, TC=150°C

6.0

mA

ICEO

VCE=30V

500

μA

IEBO

VEB=7.0V

1.0

mA

BVCEO

IC=100mA

55

V

BVCER

IC=100mA, RBE=100Ω

60

V

VCE(SAT) IC=500mA, IB=50mA

1.0

V

VCE(SAT) IC=3.0A, IB=1.0A

6.0

V

VBE(ON)

VCE=4.0V, IC=500mA

1.7

V

hFE

VCE=4.0V, IC=500mA

25

150

hFE

VCE=4.0V, IC=3.0A

5.0

hfe

VCE=4.0V, IC=100mA, f=1.0kHz

25

180

fT

VCE=10V, IC=200mA, f=1.0MHz

3.0

MHz

fhfe

VCE=4.0V, IC=100mA

30

kHz

2N3054

2N3054A

SILICON

NPN POWER TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N3054, 2N3054A

devices are silicon NPN power transistors manufactured

by the epitaxial base process, mounted in a hermetically

sealed metal case, designed for general purpose

amplifier and switching applications.

MARKING: FULL PART NUMBER

TO-66 CASE

R2 (2-September 2014)

www.centr a lsemi.com

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