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TIP30 Arkusz danych(PDF) 1 Page - Central Semiconductor Corp

Numer części TIP30
Szczegółowy opis  SILICON PNP POWER TRANSISTORS
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Producent  CENTRAL [Central Semiconductor Corp]
Strona internetowa  http://www.centralsemi.com
Logo CENTRAL - Central Semiconductor Corp

TIP30 Arkusz danych(HTML) 1 Page - Central Semiconductor Corp

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MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL TIP30
TIP30A TIP30B TIP30C
UNITS
Collector-Base Voltage
VCBO
40
60
80
100
V
Collector-Emitter Voltage
VCEO
40
60
80
100
V
Emitter-Base Voltage
VEBO
5.0
V
Continuous Collector Current
IC
1.0
A
Peak Collector Current
ICM
3.0
A
Continuous Base Current
IB
0.4
A
Power Dissipation
PD
30
W
Power Dissipation (TA=25°C)
PD
2.0
W
Operating and Storage Junction Temperature
TJ, Tstg
-65 to +150
°C
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ICEO
VCE=30V (TIP30, TIP30A)
0.3
mA
ICEO
VCE=60V (TIP30B, TIP30C)
0.3
mA
ICES
VCE=Rated VCEO
0.2
mA
IEBO
VEB=5.0V
1.0
mA
BVCEO
IC=30mA (TIP30)
40
V
BVCEO
IC=30mA (TIP30A)
60
V
BVCEO
IC=30mA (TIP30B)
80
V
BVCEO
IC=30mA (TIP30C)
100
V
VCE(SAT)
IC=1.0A, IB=125mA
0.7
V
VBE(ON)
VCE=4.0V, IC=1.0A
1.3
V
hFE
VCE=4.0V, IC=0.2A
40
hFE
VCE=4.0V, IC=1.0A
15
75
hfe
VCE=10V, IC=0.2A, f=1.0kHz
20
fT
VCE=10V, IC=0.2A, f=1.0MHz
3.0
MHz
ton
IC=1.0A, IB1= IB2=0.1A, RL=30Ω
0.3
μs
toff
IC=1.0A, IB1= IB2=0.1A, RL=30Ω
1.0
μs
TIP30
TIP30A
TIP30B
TIP30C
SILICON
PNP POWER TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR TIP30 series devices
are silicon PNP epitaxial-base power transistors designed
for power amplifier and high speed switching applications.
MARKING: FULL PART NUMBER
TO-220 CASE
R1 (12-March 2014)
www.centr a lsemi.com


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