2010. 12. 20

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SEMICONDUCTOR

TECHNICAL DATA

KF3N60P/F

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

Revision No : 0

General Description

This planar stripe MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge and excellent

avalanche characteristics. It is mainly suitable for electronic ballast and

switching mode power supplies.

FEATURES

・Qg(typ) = 8.5nC

MAXIMUM RATING (Ta=25

℃)

* : Drain current limited by maximum junction temperature.

CHARACTERISTIC

SYMBOL

RATING

UNIT

KF3N60P

KF3N60F

Drain-Source Voltage

600

V

Gate-Source Voltage

±30

V

Drain Current

3

3*

A

1.9

1.9*

Pulsed (Note1)

7

7*

Single Pulsed Avalanche Energy

(Note 2)

120

mJ

Repetitive Avalanche Energy

(Note 1)

3.2

mJ

Peak Diode Recovery dv/dt

(Note 3)

dv/dt

4.5

V/ns

Drain Power

Dissipation

Tc=25

℃

73

31

W

Derate above 25

℃

0.58

0.25

W/

℃

Maximum Junction Temperature

150

℃

Storage Temperature Range

-55

～150

℃

Thermal Characteristics

Thermal Resistance, Junction-to-Case

1.7

4

℃/W

Thermal Resistance, Junction-to-

Ambient

62.5

62.5

℃/W

G

D

S

PIN CONNECTION

DIM

MILLIMETERS

TO-220AB

1.46

A

B

C

D

E

F

G

H

J

K

M

N

O

0.8 0.1

+

_

2.8 0.1

+

_

2.54 0.2

+

_

1.27 0.1

+

_

1.4 0.1

+

_

13.08 0.3

+

_

3.6

0.2

+

_

+

_

9.9

0.2

+

_

9.2

0.2

+

_

4.5

0.2

+

_

2.4

0.2

15.95 MAX

1.3+0.1/-0.05

0.5+0.1/-0.05

3.7

1.5

A

F

B

J

G

K

M

L

L

E

I

I

O

C

H

NN

Q

D

Q

P

P

1. GATE

2. DRAIN

3. SOURCE

12

3

KF3N60P

TO-220IS (1)

A

A

B

C

C

D

D

E

E

F

G

H

H

1.47 MAX

1.47 MAX

J

K

L

M

L

N

NN

O

Q

R

R

12

3

M

DIM

MILLIMETERS

10.16

0.2

+

_

15.87

0.2

+

_

2.54

0.2

+

_

0.8

0.1

+

_

3.18

0.1

+

_

0.5

0.1

+

_

3.23

0.1

+

_

13.0

0.5

+

_

2.54

0.2

+

_

4.7

0.2

+

_

6.68

0.2

+

_

2.76

0.2

+

_

3.3

0.1

+

_

12.57

0.2

+

_

1. GATE

2. DRAIN

3. SOURCE

* Single Gauge Lead Frame

KF3N60F

(KF3N60P, KF3N60F)