BC549_550 datasheet(1/1 Pages) KEC

Numer części	BC549_550

Szczegółowy opis	EPITAXIAL PLANAR NPN TRANSISTOR

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Producent	KEC [KEC(Korea Electronics)]

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1999. 11. 30

1/1

SEMICONDUCTOR

TECHNICAL DATA

BC549/550

EPITAXIAL PLANAR NPN TRANSISTOR

Revision No : 2

LOW NOISE AMPLIFIER APPLICATION.

FEATURE

・For Complementary with PNP Type BC559/560.

MAXIMUM RATING (Ta=25

℃)

ELECTRICAL CHARACTERISTICS (Ta=25

℃)

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Collector-Emitter

Breakdown Voltage

BC549

V(BR)CEO

IC=10mA, IB=0

30

-

V

BC550

45

-

Collector-Base

Breakdown Voltage

BC549

V(BR)CBO

IC=10μ

A, IE=0

30

-

V

BC550

50

-

Emitter-Base Breakdown Voltage

V(BR)EBO

IE=10μ

A, IC=0

5.0

-

V

Collector Cut-off Current

ICBO

VCB=30V, IE=0

--

15

nA

DC Current Gain

hFE(Note)

IC=2mA, VCE=5V

110

-

800

Base-Emitter Voltage

VBE(ON)

IC=2mA, VCE=5V

0.55

-

0.7

V

Collector-Emitter Saturation Voltage

VCE(sat)

IC=100mA, IB=5mA

-

0.6

V

Base-Emitter Saturation Voltage

VBE(sat)

IC=100mA, IB=5mA

-

0.9

-

V

Transition Frequency

fT

IC=10mA, VCE=5V, f=100MHz

-

300

-

MHz

Collector Output Capacitance

Cob

VCB=10V, IE=0, f=1MHz

-

4.5

pF

Noise Figure

BC549

NF

IC=200μ

A, VCE=5V

Rg=10k

Ω, f=1kHz

-

4.0

dB

BC550

-

10

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector-Base Voltage

BC549

VCBO

30

V

BC550

50

Collector-Emitter Voltage

BC549

VCEO

30

V

BC550

45

Emitter-Base Voltage

VEBO

5V

Collector Current

IC

100

mA

Collector Power Dissipation

PC

625

mW

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55

～150

℃

Note : hFE Classification

A:110

～220, B:200～450, C:420～800

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