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IRF1010ZSPBF_15 Datasheet(Arkusz danych) 2 Page - International Rectifier

Numer części IRF1010ZSPBF_15
Szczegółowy opis  Advanced Process Technology
Pobierz  12 Pages
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Producent  IRF [International Rectifier]
Strona internetowa  http://www.irf.com
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 2 page
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IRF1010Z/S/LPbF
2
www.irf.com
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
55
–––
–––
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.049
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
5.8
7.5
m
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
gfs
Forward Transconductance
33
–––
–––
S
IDSS
Drain-to-Source Leakage Current
–––
–––
20
µA
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
200
nA
Gate-to-Source Reverse Leakage
–––
–––
-200
Qg
Total Gate Charge
–––
63
95
Qgs
Gate-to-Source Charge
–––
19
–––
nC
Qgd
Gate-to-Drain ("Miller") Charge
–––
24
–––
td(on)
Turn-On Delay Time
–––
18
–––
tr
Rise Time
–––
150
–––
td(off)
Turn-Off Delay Time
–––
36
–––
ns
tf
Fall Time
–––
92
–––
LD
Internal Drain Inductance
–––
4.5
–––
Between lead,
nH
6mm (0.25in.)
LS
Internal Source Inductance
–––
7.5
–––
from package
and center of die contact
Ciss
Input Capacitance
–––
2840
–––
Coss
Output Capacitance
–––
420
–––
Crss
Reverse Transfer Capacitance
–––
250
–––
pF
Coss
Output Capacitance
–––
1630
–––
Coss
Output Capacitance
–––
360
–––
Coss eff.
Effective Output Capacitance
–––
560
–––
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
75
(Body Diode)
A
ISM
Pulsed Source Current
–––
–––
360
(Body Diode)
Ù
VSD
Diode Forward Voltage
–––
–––
1.3
V
trr
Reverse Recovery Time
–––
22
33
ns
Qrr
Reverse Recovery Charge
–––
15
23
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 44V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
f
VGS = 10V
e
VDD = 28V
ID = 75A
RG = 6.8
TJ = 25°C, IS = 75A, VGS = 0V e
TJ = 25°C, IF = 75A, VDD = 25V
di/dt = 100A/µs
e
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 75A
e
VDS = VGS, ID = 250µA
VDS = 55V, VGS = 0V
VDS = 55V, VGS = 0V, TJ = 125°C
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VDS = 25V, ID = 75A
ID = 75A
VDS = 44V
Conditions
VGS = 10V
e
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
VGS = 20V
VGS = -20V




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