Zakładka z wyszukiwarką danych komponentów |
|
IRF3709PBF Arkusz danych(PDF) 2 Page - International Rectifier |
|
IRF3709PBF Arkusz danych(HTML) 2 Page - International Rectifier |
2 / 12 page IRF3709/S/LPbF 2 www.irf.com Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. ––– 0.88 1.3 V TJ = 25°C, IS = 30A, VGS = 0V ––– 0.82 ––– TJ = 125°C, IS = 30A, VGS = 0V trr Reverse Recovery Time ––– 48 72 ns TJ = 25°C, IF = 30A, VR=15V Qrr Reverse Recovery Charge ––– 46 69 nC di/dt = 100A/µs trr Reverse Recovery Time ––– 48 72 ns TJ = 125°C, IF = 30A, VR=15V Qrr Reverse Recovery Charge ––– 52 78 nC di/dt = 100A/µs Dynamic @ TJ = 25°C (unless otherwise specified) ns Symbol Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 382 mJ IAR Avalanche Current ––– 30 A Avalanche Characteristics S D G Diode Characteristics 90 360 A Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 53 ––– ––– S VDS = 15V, ID = 30A Qg Total Gate Charge ––– 27 41 ID = 15A Qgs Gate-to-Source Charge ––– 6.7 ––– nC VDS = 16V Qgd Gate-to-Drain ("Miller") Charge ––– 9.7 ––– VGS = 5.0V Qoss Output Gate Charge ––– 22 ––– VGS = 0V, VDS = 10V td(on) Turn-On Delay Time ––– 11 ––– VDD = 15V tr Rise Time ––– 171 ––– ID = 30A td(off) Turn-Off Delay Time ––– 21 ––– RG = 1.8Ω tf Fall Time ––– 9.2 ––– VGS = 4.5V Ciss Input Capacitance ––– 2672 ––– VGS = 0V Coss Output Capacitance ––– 1064 ––– pF VDS = 16V Crss Reverse Transfer Capacitance ––– 109 ––– ƒ = 1.0MHz VSD Diode Forward Voltage Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.029 ––– V/°C Reference to 25°C, ID = 1mA ––– 6.4 9.0 VGS = 10V, ID = 15A ––– 7.4 10.5 VGS = 4.5V, ID = 12A VGS(th) Gate Threshold Voltage 1.0 ––– 3.0 V VDS = VGS, ID = 250µA ––– ––– 20 µA VDS = 24V, VGS = 0V ––– ––– 100 VDS = 24V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 200 VGS = 16V Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -16V Static @ TJ = 25°C (unless otherwise specified) IGSS IDSS Drain-to-Source Leakage Current RDS(on) Static Drain-to-Source On-Resistance m Ω |
Podobny numer części - IRF3709PBF |
|
Podobny opis - IRF3709PBF |
|
|
Link URL |
Polityka prywatności |
ALLDATASHEET.PL |
Czy Alldatasheet okazała się pomocna? [ DONATE ] |
O Alldatasheet | Reklama | Kontakt | Polityka prywatności | Linki | Lista producentów All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |