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IRF3709ZCSPBF_15 Datasheet(Arkusz danych) 2 Page - International Rectifier

Numer części IRF3709ZCSPBF_15
Szczegółowy opis  High Frequency Synchronous Buck Converters for Computer Processor Power
Pobierz  12 Pages
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Producent  IRF [International Rectifier]
Strona internetowa  http://www.irf.com
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IRF3709ZCS/LPbF
2
www.irf.com
S
D
G
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
30
–––
–––
V
∆ΒVDSS/∆TJ
Breakdown Voltage Temp. Coefficient
–––
0.021
––– mV/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
5.0
6.3
m
–––
6.2
7.8
VGS(th)
Gate Threshold Voltage
1.35
–––
2.25
V
∆VGS(th)/∆TJ
Gate Threshold Voltage Coefficient
–––
-5.5
––– mV/°C
IDSS
Drain-to-Source Leakage Current
–––
–––
1.0
µA
–––
–––
150
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
gfs
Forward Transconductance
88
–––
–––
S
Qg
Total Gate Charge
–––
17
26
Qgs1
Pre-Vth Gate-to-Source Charge
–––
4.4
–––
Qgs2
Post-Vth Gate-to-Source Charge
–––
1.7
–––
nC
Qgd
Gate-to-Drain Charge
–––
6.0
–––
Qgodr
Gate Charge Overdrive
–––
4.9
–––
See Fig. 14a&b
Qsw
Switch Charge (Qgs2 + Qgd)
–––
7.7
–––
Qoss
Output Charge
–––
11
–––
nC
td(on)
Turn-On Delay Time
–––
13
–––
tr
Rise Time
–––
41
–––
td(off)
Turn-Off Delay Time
–––
16
–––
ns
tf
Fall Time
–––
4.7
–––
Ciss
Input Capacitance
–––
2130
–––
Coss
Output Capacitance
–––
450
–––
pF
Crss
Reverse Transfer Capacitance
–––
220
–––
Avalanche Characteristics
Parameter
Units
EAS
Single Pulse Avalanche Energy
d
mJ
IAR
Avalanche Current
Ù
A
EAR
Repetitive Avalanche Energy
™
mJ
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
87
h
(Body Diode)
A
ISM
Pulsed Source Current
–––
–––
350
(Body Diode)
Ù
VSD
Diode Forward Voltage
–––
–––
1.0
V
trr
Reverse Recovery Time
–––
16
24
ns
Qrr
Reverse Recovery Charge
–––
6.2
9.3
nC
MOSFET symbol
VGS = 4.5V, ID = 17A
e
–––
VGS = 4.5V
Typ.
–––
–––
ID = 17A
VGS = 0V
VDS = 15V
TJ = 25°C, IF = 17A, VDD = 15V
di/dt = 100A/µs
e
TJ = 25°C, IS = 17A, VGS = 0V e
showing the
integral reverse
p-n junction diode.
VDS = VGS, ID = 250µA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
Clamped Inductive Load
VDS = 15V, ID = 17A
VDS = 16V, VGS = 0V
VDD = 15V, VGS = 4.5V
e
ID = 17A
VDS = 15V
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 21A
e
VGS = 20V
VGS = -20V
Conditions
7.9
Max.
60
17
ƒ = 1.0MHz




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