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IRF6201PBF Arkusz danych(PDF) 2 Page - International Rectifier

Numer części IRF6201PBF
Szczegółowy opis  Battery operated DC motor inverter MOSFET
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Producent  IRF [International Rectifier]
Strona internetowa  http://www.irf.com
Logo IRF - International Rectifier

IRF6201PBF Arkusz danych(HTML) 2 Page - International Rectifier

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IRF6201PbF
2
S
D
G
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Pulse width ≤ 400µs; duty cycle ≤ 2%.
ƒ When mounted on 1 inch square copper board.
„ Rθ is measured at TJ approximately 90°C.
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
BVDSS
Drain-to-Source Breakdown Voltage
20
–––
–––
V
∆ΒVDSS/∆TJ
Breakdown Voltage Temp. Coefficient
–––
4.6
–––
mV/°C
RDS(on)
–––
1.90
2.45
–––
2.10
2.75
VGS(th)
Gate Threshold Voltage
0.5
–––
1.1
V
VDS = VGS, ID = 100µA
IDSS
Drain-to-Source Leakage Current
–––
–––
1.0
–––
–––
150
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
–––
-100
Qg
Total Gate Charge
–––
130
195
Qgs
Gate-to-Source Charge
–––
16
–––
Qgd
Gate-to-Drain Charge
–––
60
–––
td(on)
Turn-On Delay Time
–––
29
–––
tr
Rise Time
–––
100
–––
td(off)
Turn-Off Delay Time
–––
320
–––
tf
Fall Time
–––
265
–––
Ciss
Input Capacitance
–––
8555
–––
Coss
Output Capacitance
–––
1735
–––
Crss
Reverse Transfer Capacitance
–––
1290
–––
Diode Characteristics
Parameter
Min.
Typ.
Max.
Units
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
Ù
VSD
Diode Forward Voltage
–––
–––
1.2
V
trr
Reverse Recovery Time
–––
82
120
ns
Qrr
Reverse Recovery Charge
–––
180
270
nC
Thermal Resistance
Parameter
Units
RθJL
Junction-to-Drain Lead
f
RθJA
Junction-to-Ambient
e
Typ.
–––
–––
°C/W
Max.
20
50
Static Drain-to-Source On-Resistance
A
–––
–––
–––
–––
2.5
110
nA
nC
ns
pF
RG = 6.8
VDS = 16V, VGS = 0V, TJ = 125°C
VDD = 20V, VGS = 4.5V
ID = 1.0A
VDS = 10V
VGS = 12V
VGS = -12V
VGS = 4.5V
m
µA
TJ = 25°C, IF = 2.5A, VDD = 16V
di/dt = 100/µs
d
TJ = 25°C, IS = 2.5A, VGS = 0V d
showing the
integral reverse
p-n junction diode.
MOSFET symbol
ID = 22A
VDS = 16V, VGS = 0V
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 4.5V, ID = 27A d
VGS = 2.5V, ID = 22A d
Conditions
See Figs. 10a & 10b
ƒ = 1.0MHz
VGS = 0V
VDS = 16V


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