IRF6631PBF_15 datasheet(1/10 Pages) IRF

Numer części	IRF6631PBF

Szczegółowy opis	Low Switching and Conduction Losses

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05/29/06

IRF6631PbF

IRF6631TRPbF

DirectFET

Power MOSFET

PD - 97217

Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

Fig 1. Typical On-Resistance vs. Gate Voltage

Typical values (unless otherwise specified)

Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage

Click on this section to link to the appropriate technical paper.

Click on this section to link to the DirectFET Website.

Surface mounted on 1 in. square Cu board, steady state.

TC measured with thermocouple mounted to top (Drain) of part.

Repetitive rating; pulse width limited by max. junction temperature.

Starting TJ = 25°C, L = 0.24mH, RG = 25Ω, IAS = 10A.

Notes:

SQ

SX

ST

MQ

MX

MT

MP

DirectFET

ISOMETRIC

SQ

3

4

5

6

7

8

9

10

VGS, Gate -to -Source Voltage (V)

0

5

10

15

20

ID = 13A

TJ = 25°C

TJ = 125°C

VDSS

VGS

RDS(on)

30V max ±20V max 6.0m

Ω@ 10V 8.3mΩ@ 4.5V

Absolute Maximum Ratings

Parameter

Units

VDS

Drain-to-Source Voltage

V

VGS

Gate-to-Source Voltage

ID @ TA = 25°C

Continuous Drain Current, VGS @ 10V

e

ID @ TA = 70°C

Continuous Drain Current, VGS @ 10V

e

A

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V

f

IDM

Pulsed Drain Current

g

EAS

Single Pulse Avalanche Energy

h

mJ

IAR

Avalanche Current

Ãg

A

10

Max.

10

57

100

±20

30

13

0

5

10

15

20

25

30

QG Total Gate Charge (nC)

0.0

2.0

4.0

6.0

8.0

10.0

12.0

VDS= 24V

VDS= 15V

ID= 10A

Qg tot

Qgd

Qgs2

Qrr

Qoss Vgs(th)

12nC

4.4nC

1.1nC

10nC

7.3nC

1.8V

l RoHs Compliant

l Lead-Free (Qualified up to 260°C Reflow)

l Application Specific MOSFETs

l Ideal for CPU Core DC-DC Converters

l Low Switching and Conduction Losses

l Low Profile (<0.7mm)

l Dual Sided Cooling Compatible

l Compatible with existing Surface Mount Techniques

Description

The IRF6631PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve

the lowest on-state resistance in a package that has the footprint of a Micro-8 and only 0.7 mm profile. The DirectFET package is compatible

with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering

techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual

sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

The IRF6631PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to

reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/high efficiency DC-DC convert-

ers that power high current loads such as the latest generation of microprocessors. The IRF6631PbF has been optimized for parameters that

are critical in synchronous buck converter’s CtrlFET sockets.

Podobny numer części - IRF6631PBF_15

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