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IRF6725MTRPBF Arkusz danych(PDF) 1 Page - International Rectifier

Numer części IRF6725MTRPBF
Szczegółowy opis  RoHS Compliant and Halogen Free
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Producent  IRF [International Rectifier]
Strona internetowa  http://www.irf.com
Logo IRF - International Rectifier

IRF6725MTRPBF Arkusz danych(HTML) 1 Page - International Rectifier

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04/30/09
IRF6725MPbF
IRF6725MTRPbF
DirectFET
™ Power MOSFET ‚
Description
The IRF6725MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack-
age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6725MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6725MPbF has been optimized for parameters that are critical in synchronous buck
operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses.
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

Fig 1. Typical On-Resistance vs. Gate Voltage
Typical values (unless otherwise specified)
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 0.75mH, RG = 25Ω, IAS = 22A.
Notes:
DirectFET
™ ISOMETRIC
MX
l RoHS Compliant and Halogen Free

l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible

l Ultra Low Package Inductance
l Optimized for High Frequency Switching

l Ideal for CPU Core DC-DC Converters
l Optimized for both Sync.FET and some Control FET
application

l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques

l 100% Rg tested
SQ
SX
ST
MQ
MX
MT
MP
0
5
10
15
20
25
30
35
40
QG, Total Gate Charge (nC)
0.0
1.0
2.0
3.0
4.0
5.0
VDS= 24V
VDS= 15V
ID= 22A
0
5
10
15
20
VGS, Gate -to -Source Voltage (V)
0
1
2
3
4
5
6
ID = 28A
TJ = 25°C
TJ = 125°C
VDSS
VGS
RDS(on)
RDS(on)
30V max ±20V max 1.7m
Ω@ 10V 2.4mΩ@ 4.5V
Qg tot
Qgd
Qgs2
Qrr
Qoss Vgs(th)
36nC
11nC
3.9nC
39nC
21nC
1.8V
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
V
VGS
Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V e
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
e
A
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V f
IDM
Pulsed Drain Current
g
EAS
Single Pulse Avalanche Energy
h
mJ
IAR
Avalanche Current
Ãg
A
Max.
22
170
220
±20
30
28
190
22
PD - 96120A


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