IRF6795MTRPBF datasheet(7/9 Pages) IRF

Numer części	IRF6795MTRPBF

Szczegółowy opis	RoHS Compliant Containing No Lead and Halogen Free

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IRF6795MTRPbF

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7

Fig 18.

Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

P.W.

Period

di/dt

Diode Recovery

dv/dt

Ripple

≤ 5%

Body Diode

Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

VGS=10V

VDD

ISD

Driver Gate Drive

D.U.T. ISD Waveform

D.U.T. VDS Waveform

Inductor Curent

D =

P.W.

Period

*** VGS = 5V for Logic Level Devices

***

+

-

+

-

RG

VDD

• dv/dt controlled by RG

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

D.U.T

**

*

* Use P-Channel Driver for P-Channel Measurements

** Reverse Polarity for P-Channel

DirectFET Board Footprint, MX Outline

(Medium Size Can, X-Designation).

Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.

This includes all recommendations for stencil and substrate designs.

G = GATE

D = DRAIN

S = SOURCE

D

G

S

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