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IRF9310PBF Arkusz danych(PDF) 5 Page - International Rectifier

Numer części IRF9310PBF
Szczegółowy opis  CHARGE AND DISCHARGE SWITCH FOR NOTEBOOK PC BATTERY APPLICATION
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Producent  IRF [International Rectifier]
Strona internetowa  http://www.irf.com
Logo IRF - International Rectifier

IRF9310PBF Arkusz danych(HTML) 5 Page - International Rectifier

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IRF9310PbF
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5
Fig 14. Maximum Avalanche Energy vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
Fig 13. Typical On-Resistance vs. Drain Current
Fig 16
. Typical Power vs. Time
* Reverse Polarity of D.U.T for P-Channel
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤ 5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D =
P.W.
Period
* VGS = 5V for Logic Level Devices
*
Inductor Current
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
• di/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
+
+
+
-
-
-
ƒ
„
‚
RG
VDD
D.U.T
*

Fig 17.
Diode Reverse Recovery Test Circuit for P-Channel HEXFET® Power MOSFETs
2
4
6
8
10
12
14
16
18
20
-VGS, Gate -to -Source Voltage (V)
2
4
6
8
10
12
TJ = 125°C
TJ = 25°C
ID = -20A
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
0
300
600
900
1200
1500
1800
2100
2400
2700
ID
TOP
-1.8A
-2.7A
BOTTOM -16A
0
20
40
60
80
100 120 140 160
-ID, Drain Current (A)
2
4
6
8
10
12
14
VGS = -10V
VGS = -4.5V
1E-5
1E-4
1E-3
1E-2
1E-1
1E+0
Time (sec)
0
200
400
600
800
1000


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