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IRFB7545PBF Arkusz danych(PDF) 2 Page - International Rectifier |
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IRFB7545PBF Arkusz danych(HTML) 2 Page - International Rectifier |
2 / 10 page IRFB7545PbF 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 5, 2014 Absolute Maximum Rating Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 95 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 67 A IDM Pulsed Drain Current 380 PD @TC = 25°C Maximum Power Dissipation 125 W Linear Derating Factor 0.83 W/°C VGS Gate-to-Source Voltage ± 20 V TJ TSTG Operating Junction and Storage Temperature Range -55 to + 175 °C Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m) Avalanche Characteristics Symbol Parameter Max. Units EAS (Thermally limited) Single Pulse Avalanche Energy 140 mJ EAS (Thermally limited) Single Pulse Avalanche Energy 235 IAR Avalanche Current See Fig 15, 16, 23a, 23b A EAR Repetitive Avalanche Energy mJ Thermal Resistance Symbol Parameter Typ. Max. Units RJC Junction-to-Case ––– 1.21 °C/W RCS Case-to-Sink, Flat Greased Surface 0.50 ––– RJA Junction-to-Ambient ––– 62 Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 60 ––– ––– V VGS = 0V, ID = 250µA V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 46 ––– mV/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– 4.9 5.9 m VGS = 10V, ID = 57A VGS(th) Gate Threshold Voltage 2.1 ––– 3.7 V VDS = VGS, ID = 100µA IDSS Drain-to-Source Leakage Current ––– ––– 1.0 µA VDS = 60V, VGS = 0V ––– ––– 150 VDS = 60V,VGS = 0V,TJ =125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V RG Gate Resistance ––– 2.3 ––– ––– 6.3 ––– VGS = 6.0V, ID = 29A Notes: Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 88µH, RG = 50, IAS = 57A, VGS =10V. ISD 57A, di/dt 810A/µs, VDD V(BR)DSS, TJ 175°C. Pulse width 400µs; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. R is measured at TJ approximately 90°C. Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 22A, VGS =10V. |
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