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IRFP2907ZPBF Arkusz danych(PDF) 1 Page - International Rectifier |
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IRFP2907ZPBF Arkusz danych(HTML) 1 Page - International Rectifier |
1 / 9 page IRFP2907ZPbF HEXFET® Power MOSFET VDSS = 75V RDS(on) = 4.5mΩ ID = 90A 02/10/11 www.irf.com 1 HEXFET® is a registered trademark of International Rectifier. Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitiveavalancherating.Thesefeaturescombine to make this design an extremely efficient and reliable device for use in a wide variety of applications. S D G Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax TO-247AC Absolute Maximum Ratings Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (See Fig. 9) ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current PD @TC = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V EAS Single Pulse Avalanche Energy (Thermally Limited) d mJ EAS (tested) Single Pulse Avalanche Energy Tested Value i IAR Avalanche Current A EAR Repetitive Avalanche Energy h mJ TJ Operating Junction and °C TSTG Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case j ––– 0.49 °C/W RθCS Case-to-Sink, Flat, Greased Surface jà 0.24 ––– RθJA Junction-to-Ambient j ––– 40 Max. 170 120 680 90 10 lbf•in (1.1N•m) 310 2.0 ± 20 520 690 See Fig.12a,12b,15,16 300 (1.6mm from case ) -55 to + 175 l Lead-Free PD - 95480B |
Podobny numer części - IRFP2907ZPBF |
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