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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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IRFP2907PBF Arkusz danych(PDF) 1 Page - International Rectifier |
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IRFP2907PBF Arkusz danych(HTML) 1 Page - International Rectifier |
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1 / 9 page  Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 209 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 148 A IDM Pulsed Drain Current 840 PD @TC = 25°C Power Dissipation 470 W Linear Derating Factor 3.1 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy 1970 mJ IAR Avalanche Current See Fig.12a, 12b, 15, 16 A EAR Repetitive Avalanche Energy mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Mounting Torque, 6-32 or M3 screw 10 lbf•in (1.1N•m) IRFP2907PbF HEXFET® Power MOSFET This Stripe Planar design of HEXFET®Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. S D G Absolute Maximum Ratings Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.32 RθCS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W RθJA Junction-to-Ambient ––– 40 Thermal Resistance VDSS = 75V RDS(on) = 4.5mΩ ID = 209A Description 08/08/11 www.irf.com 1 TO-247AC l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Benefits Typical Applications l Telecom applications requiring soft start PD -95050C |
Podobny numer części - IRFP2907PBF_15 |
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Podobny opis - IRFP2907PBF_15 |
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