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IRFP9140NPBF Arkusz danych(PDF) 1 Page - International Rectifier |
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IRFP9140NPBF Arkusz danych(HTML) 1 Page - International Rectifier |
1 / 9 page IRFP9140NPbF HEXFET® Power MOSFET PD - 95665 Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial- industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. VDSS = -100V RDS(on) = 0.117Ω ID = -23A l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l P-Channel l Fast Switching l Fully Avalanche Rated l Lead-Free Description TO-247AC Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -23 ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -16 A IDM Pulsed Drain Current
-76 PD @TC = 25°C Power Dissipation 140 W Linear Derating Factor 0.91 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy
430 mJ IAR Avalanche Current -11 A EAR Repetitive Avalanche Energy 14 mJ dv/dt Peak Diode Recovery dv/dt
-5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Mounting torque, 6-32 or M3 screw10 lbfin (1.1Nm) Absolute Maximum Ratings Parameter Typ. Max. Units RθJC Junction-to-Case 1.1 RθCS Case-to-Sink, Flat, Greased Surface 0.24 °C/W RθJA Junction-to-Ambient 40 Thermal Resistance 7/30/04 S D G |
Podobny numer części - IRFP9140NPBF |
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Podobny opis - IRFP9140NPBF |
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