TIP111 datasheet(2/8 Pages) ONSEMI

Numer części	TIP111

Szczegółowy opis	Plastic Medium-Power Complementary Silicon Transistors

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Producent	ONSEMI [ON Semiconductor]

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TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)

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MAXIMUM RATINGS

Rating

Symbol

TIP110,

TIP115

TIP111,

TIP116

TIP112,

TIP117

Unit

Collector−Emitter Voltage

VCEO

60

80

100

Vdc

Collector−Base Voltage

VCB

60

80

100

Vdc

Emitter−Base Voltage

VEB

5.0

Vdc

Collector Current − Continuous

− Peak

IC

2.0

4.0

Adc

Base Current

IB

50

mAdc

Total Power Dissipation @ TC = 25°C

Derate above 25°C

PD

50

0.4

W

W/°C

Total Power Dissipation @ TA = 25°C

Derate above 25°C

PD

2.0

0.016

W

W/°C

Unclamped Inductive Load Energy − Figure 13

E

25

mJ

Operating and Storage Junction

TJ, Tstg

– 65 to + 150

°C

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

RqJC

2.5

°C/W

Thermal Resistance, Junction−to−Ambient

RqJA

62.5

°C/W

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 1)

(IC = 30 mAdc, IB = 0)

TIP110, TIP115

TIP111, TIP116

TIP112, TIP117

VCEO(sus)

60

80

100

−

Vdc

Collector Cutoff Current

(VCE = 30 Vdc, IB = 0)

TIP110, TIP115

(VCE = 40 Vdc, IB = 0)

TIP111, TIP116

(VCE = 50 Vdc, IB = 0)

TIP112 ,TIP117

ICEO

−

2.0

mAdc

Collector Cutoff Current

(VCB = 60 Vdc, IE = 0)

TIP110, TIP115

(VCB = 80 Vdc, IE = 0)

TIP111, TIP116

(VCB = 100 Vdc, IE = 0)

TIP112, TIP117

ICBO

−

1.0

mAdc

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

IEBO

−

2.0

mAdc

ON CHARACTERISTICS (Note 1)

DC Current Gain

(IC = 1.0 Adc, VCE = 4.0 Vdc)

(IC = 2.0 Adc, VCE = 4.0 Vdc)

hFE

1000

500

−

Collector−Emitter Saturation Voltage (IC = 2.0 Adc, IB = 8.0 mAdc)

VCE(sat)

−

2.5

Vdc

Base−Emitter On Voltage (IC = 2.0 Adc, VCE = 4.0 Vdc)

VBE(on)

−

2.8

Vdc

DYNAMIC CHARACTERISTICS

Small−Signal Current Gain (IC = 0.75 Adc, VCE = 10 Vdc, f = 1.0 MHz)

hfe

25

−

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

TIP115, TIP116, TIP117

TIP110, TIP111, TIP112

Cob

−

200

100

pF

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

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