TIP117G datasheet(5/8 Pages) ONSEMI

Numer części	TIP117G

Szczegółowy opis	Plastic Medium-Power Complementary Silicon Transistors

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TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)

www.onsemi.com

5

1.0

Figure 6. TIP115, 116, 117

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

10

4.0

2.0

1.0

0.1

10

60 80 100

BONDING WIRE LIMITED

THERMALLY LIMITED

@ TC = 25°C (SINGLE PULSE)

TJ = 150°C

dc

1ms

40

TIP115

TIP116

TIP117

SECONDARY BREAKDOWN LIMITED

5ms

CURVES APPLY BELOW

RATED VCEO

1.0

Figure 7. TIP110, 111, 112

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

10

4.0

2.0

1.0

0.1

10

80 100

60

TIP110

TIP111

TIP112

BONDING WIRE LIMITED

THERMALLY LIMITED

@ TC = 25°C (SINGLE PULSE)

TJ = 150°C

SECONDARY BREAKDOWN LIMITED

CURVES APPLY BELOW

RATED VCEO

dc

ACTIVE−REGION SAFE−OPERATING AREA

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figures 6 and 7 is based on TJ(pk) = 150°C;

TC is variable depending on conditions. Second breakdown

pulse limits are valid for duty cycles to 10% provided TJ(pk)

< 150

°C. TJ(pk) may be calculated from the data in Figure 5.

At high case temperatures, thermal limitations will reduce

the power that can be handled to values less than the

limitations imposed by second breakdown.

200

0.04

VR, REVERSE VOLTAGE (VOLTS)

10

0.4 0.6 1.0

2.0

40

4.0

0.06 0.1

0.2

70

30

TC = 25°C

Cib

50

Cob

PNP

NPN

Figure 8. Capacitance

100

20

6.0 10

20

Podobny numer części - TIP117G

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ON Semiconductor	TIP117G	99Kb / 8P	Plastic Medium-Power Complementary Silicon Transistors September, 2005 ??Rev. 5

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Podobny opis - TIP117G

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