BAP51LX

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© NXP B.V. 2013. All rights reserved.

Product data sheet

Rev. 2 — 6 August 2013

3 of 9

NXP Semiconductors

BAP51LX

Silicon PIN diode

7.

Characteristics

Table 6.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

forward voltage

-

0.95

1.1

V

reverse current

-

-

100

nA

diode capacitance

see Figure 2; f = 1 MHz;

-

0.30

-

pF

-

0.22

0.40

pF

-

0.17

0.30

pF

diode forward resistance

see Figure 3; f = 100 MHz;

-

4.9

9



-

3.2

6.5



-

1.4

2.5



-

0.9

1.5



ISL

isolation

f = 900 MHz

-

19

-

dB

f = 1800 MHz

-

15

-

dB

f = 2450 MHz

-

13

-

dB

insertion loss

f = 900 MHz

-

0.36

-

dB

f = 1800 MHz

-

0.36

-

dB

f = 2450 MHz

-

0.38

-

dB

insertion loss

f = 900 MHz

-

0.25

-

dB

f = 1800 MHz

-

0.26

-

dB

f = 2450 MHz

-

0.27

-

dB

insertion loss

f = 900 MHz

-

0.12

-

dB

f = 1800 MHz

-

0.14

-

dB

f = 2450 MHz

-

0.15

-

dB

insertion loss

f = 900 MHz

-

0.09

-

dB

f = 1800 MHz

-

0.10

-

dB

f = 2450 MHz

-

0.12

-

dB



L

charge carrier life time

-0.55

-

s

series inductance

-

0.4

-

nH