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BAP64-05W Arkusz danych(PDF) 3 Page - NXP Semiconductors |
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BAP64-05W Arkusz danych(HTML) 3 Page - NXP Semiconductors |
3 / 9 page BAP64-05W All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved. Product data sheet Rev. 2 — 28 April 2015 3 of 9 NXP Semiconductors BAP64-05W Silicon PIN diode [1] Guaranteed on AQL basis: inspection level S4, AQL 1.0. 7.1 Graphical data rD diode forward resistance see Figure 2; f = 100 MHz; [1] IF =0.5 mA - 20 40 IF =1mA - 10 20 IF =10mA - 2.0 3.8 IF = 100 mA - 0.7 1.35 L charge carrier life time when switched from IF =10mA to IR =6mA; RL = 100 ; measured at IR =3mA -1.55 - s LS series inductance - 1.2 - nH Table 7. Characteristics …continued Values are specified per diode; Tj = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit f=1MHz; Tj =25 C. f = 100 MHz; Tj =25 C. Fig 1. Diode capacitance as a function of reverse voltage; typical values Fig 2. Forward resistance as a function of forward current; typical values |
Podobny numer części - BAP64-05W_15 |
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Podobny opis - BAP64-05W_15 |
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