BAS16_SER

All information provided in this document is subject to legal disclaimers.

© NXP Semiconductors N.V. 2014. All rights reserved.

Product data sheet

Rev. 6 — 24 September 2014

4 of 21

NXP Semiconductors

BAS16 series

High-speed switching diodes

[1]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2]

Device mounted on an FR4 PCB with 60

m copper strip line.

[3]

Single diode loaded.

[4]

Soldering point of cathode tab.

[5]

[6]

Soldering points at pins 4, 5 and 6.

forward current

BAS16

[1] -215

mA

BAS16H

BAS16L

[2] -215

mA

BAS16T

[1] -155

mA

BAS16VV

BAS16VY

[1][3] -200

mA

BAS16W

[1] -175

mA

BAS16J

BAS316

BAS516

[1] -250

mA

repetitive peak forward

current

 0.25

-500

mA

non-repetitive peak forward

current

square wave;

4

A

-

1

A

-

0.5

A

total power dissipation

BAS16

[1] -250

mW

BAS16H

[2] -380

mW

[5] -830

mW

BAS16J

[5] -550

mW

BAS16L

[2] -250

mW

BAS16T

[1][4] -170

mW

BAS16VV

[1][3] -180

mW

BAS16VY

[1][3][6] -250

mW

BAS16W

[1] -200

mW

BAS316

[1][4] -400

mW

BAS516

[1][4] -500

mW

Per device

junction temperature

-

150

C

ambient temperature

65

+150

C

storage temperature

65

+150

C

Table 6.

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit