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IRLHS6242PBF Arkusz danych(PDF) 5 Page - International Rectifier

Numer części IRLHS6242PBF
Szczegółowy opis  Compatible with Existing Surface Mount Techniques
Download  9 Pages
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Producent  IRF [International Rectifier]
Strona internetowa  http://www.irf.com
Logo IRF - International Rectifier

IRLHS6242PBF Arkusz danych(HTML) 5 Page - International Rectifier

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www.irf.com © 2013 International Rectifier
Submit Datasheet Feedback
December 17, 2013
IRLHS6242PbF
Fig 13. Typical On-Resistance vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
Fig 15. Typical Power vs. Time
Fig 14. Maximum Avalanche Energy vs. Drain Current
Fig 16.
Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
CircuitLayoutConsiderations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤ 5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D =
P.W.
Period
* VGS = 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
ƒ
„
‚
RG
VDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T

25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
0
10
20
30
40
50
60
70
ID
TOP
2.2A
4.3A
BOTTOM 8.5A
1E-5
1E-4
1E-3
1E-2
1E-1
1E+0
Time (sec)
0
100
200
300
400
500
600
0
2
4
6
8
10
12
14
16
VGS, Gate -to -Source Voltage (V)
5
10
15
20
25
ID = 8.5A
TJ = 125°C
TJ = 25°C
0
10
20
30
40
50
60
70
ID, Drain Current (A)
5
10
15
20
25
30
35
Vgs = 2.5V
Vgs = 4.5V


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