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BYC10B-600 Arkusz danych(PDF) 2 Page - NXP Semiconductors |
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BYC10B-600 Arkusz danych(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 1;3 Semiconductors Product specification Rectifier diode BYC10B-600 ultrafast, low switching loss FEATURES SYMBOL QUICK REFERENCE DATA • Extremely fast switching V R = 600 V • Low reverse recovery current • Low thermal resistance V F ≤ 1.8 V • Reduces switching losses in associated MOSFET I F(AV) = 10 A t rr = 19 ns (typ) APPLICATIONS PINNING SOT404 • Active power factor correction PIN DESCRIPTION • Half-bridge lighting ballasts • Half-bridge/ full-bridge switched 1 no connection mode power supplies. 2 cathode 1 The BYC10B-600 is supplied in the SOT404 surface mounting 3 anode package. tab cathode LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V RRM Peak repetitive reverse voltage - 600 V V RWM Crest working reverse voltage - 600 V V R Continuous reverse voltage T mb ≤ 114 ˚C - 500 V I F(AV) Average forward current δ = 0.5; with reapplied V RRM(max); - 10 A T mb ≤ 78 ˚C I FRM Repetitive peak forward current δ = 0.5; with reapplied V RRM(max); - 20 A T mb ≤ 78 ˚C I FSM Non-repetitive peak forward t = 10 ms - 65 A current. t = 8.3 ms - 71 A sinusoidal; T j = 150˚C prior to surge with reapplied V RWM(max) T stg Storage temperature -40 150 ˚C T j Operating junction temperature - 150 ˚C THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-mb Thermal resistance junction to - - 2 K/W mounting base R th j-a Thermal resistance junction to minimum footprint, FR4 board - 50 - K/W ambient k a tab 3 13 tab 2 1 it is not possible to make connection to pin 2 of the SOT404 package March 2001 1 Rev 1.400 |
Podobny numer części - BYC10B-600_15 |
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Podobny opis - BYC10B-600_15 |
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