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74HC_HCT3G07 Arkusz danych(PDF) 6 Page - NXP Semiconductors |
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74HC_HCT3G07 Arkusz danych(HTML) 6 Page - NXP Semiconductors |
6 / 14 page 74HC_HCT3G07 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved. Product data sheet Rev. 4 — 16 December 2013 6 of 14 NXP Semiconductors 74HC3G07; 74HCT3G07 Triple buffer with open-drain outputs [1] CPD is used to determine the dynamic power dissipation (PD in W). PD = CPD VCC2 fi N + (CL VCC2 fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching; (C L VCC 2 f o) = sum of outputs. 12. Waveforms 74HCT3G07 tPZL OFF-state to LOW propagation delay nA to nY; see Figure 6 VCC = 4.5 V - 11 27 - 32 ns tPLZ LOW to OFF-state propagation delay nA to nY; see Figure 6 VCC = 4.5 V - 10 26 - 31 ns tTHL HIGH to LOW output transition time VCC = 4.5 V; see Figure 6 -6 19 - 22 ns CPD power dissipation capacitance VI =GND to VCC 1.5 V [1] -4 - - pF Table 8. Dynamic characteristics …continued Voltages are referenced to GND (ground = 0 V); all typical values are measured at Tamb =25 C; for test circuit see Figure 7. Symbol Parameter Conditions 40 C to +85 C 40 C to +125 C Unit Min Typ Max Min Max Measurement points are given in Table 9. VOL is the typical output voltage level that occurs with the output load. Fig 6. The input (nA) to output (nY) propagation delays 001aak034 nA input GND nY output VM tPLZ tPZL tTHL VX VM VOL VCC VI Table 9. Measurement points Type Input Output VM VM VX 74HC3G07 0.5 V CC 0.5 V CC 0.1 V CC 74HCT3G07 1.3 V 1.3 V 0.1 V CC |
Podobny numer części - 74HC_HCT3G07_15 |
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Podobny opis - 74HC_HCT3G07_15 |
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