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MTB04N03F3 Arkusz danych(PDF) 2 Page - Cystech Electonics Corp.

Numer części MTB04N03F3
Szczegółowy opis  N-Channel Enhancement Mode Power MOSFET
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Producent  CYSTEKEC [Cystech Electonics Corp.]
Strona internetowa  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTB04N03F3 Arkusz danych(HTML) 2 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C807F3
Issued Date : 2009.12.02
Revised Date : 2015.09.04
Page No. : 2/9
MTB04N03F3
CYStek Product Specification
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current @VGS=10V, TC=25
°C (silicon limit)
115
Continuous Drain Current @VGS=10V, TC=100
°C(silicon limit)
81
Continuous Drain Current @VGS=10V, TC=25
°C (package limit)
60
Continuous Drain Current @VGS=10V, TC=100
°C (package limit)
ID
60
Pulsed Drain Current
IDM
460 *1
Avalanche Current
IAS
26
A
Avalanche Energy
L=2mH, ID=26A, VDD=25V
EAS
576
Repetitive Avalanche Energy
L=0.05mH
EAR
25
mJ
TC=25°C
107
Total Power Dissipation
TC=100°C
PD
53
W
Operating Junction and Storage Temperature
Tj, Tstg
-55~+175
°C
Note : *1
. Pulse width limited by maximum junction temperature.
*2
. 100% UIS testing in condition of VD=25V, L=1mH, VG=10V, IL=20A, Rated VDS=30V
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Rth,j-c
1.4
Thermal Resistance, Junction-to-ambient, max
Rth,j-a
62.5
°C/W
Characteristics (Tj=25
°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BVDSS
30
-
-
VGS=0V, ID=250μA
VGS(th)
1
-
2.5
V
VDS = VGS, ID=250μA
*GFS
-
38
-
S
VDS =5V, ID=20A
IGSS
-
-
±
100
nA
VGS=±20V
IDSS
-
-
1
VDS =30V, VGS =0V
IDSS
-
-
25
μA
VDS =30V, VGS =0V, Tj=125
°C
*RDS(ON)
-
3.4
5.0
VGS =10V, ID=30A
*RDS(ON)
-
4.3
7.5
VGS =4.5V, ID=24A
Dynamic
*Qg(VGS=10V)
-
60
-
*Qg(VGS=5V)
-
35
-
*Qgs
-
10
-
*Qgd
-
17
-
nC
VDS=15V, ID=30A,VGS=10V
*td(ON)
-
16.8
-
*tr
-
20.8
-
*td(OFF)
-
71.2
-
*tf
-
21.4
-
ns
VDS=15V, ID=25A, VGS=10V,
RGS=2.7Ω


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