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IRFAG50 Arkusz danych(PDF) 2 Page - International Rectifier |
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IRFAG50 Arkusz danych(HTML) 2 Page - International Rectifier |
2 / 7 page IRFAG50 2 www.irf.com Thermal Resistance Parameter Min Typ Max Units Test Conditions RthJC Junction to Case — — 0.83 RthJA Junction to Ambient — — 30 Typical socket mount °C/W Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions IS Continuous Source Current (Body Diode) — — 5.6 ISM Pulse Source Current (Body Diode) ➀ —— 2 2 VSD Diode Forward Voltage — — 1.8 V Tj = 25°C, IS =5.6A, VGS = 0V ➃ trr Reverse Recovery Time — — 1200 nS Tj = 25°C, IF =5.6A, di/dt ≤ 100A/µs QRR Reverse Recovery Charge — — 8.4 µC VDD ≤ 50V ➃ t on Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. A For footnotes refer to the last page Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage 1000 — — V VGS = 0V, ID = 1.0mA ∆BVDSS/∆TJ Temperature Coefficient of Breakdown — 1.4 — V/°C Reference to 25°C, ID = 1.0mA Voltage RDS(on) Static Drain-to-Source On-State — — 2.0 VGS =10V, ID =3.5A➃ Resistance — — 2.3 VGS = 10V, ID =5.6A ➃ VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID =250mA gfs Forward Transconductance 5.2 — — S ( )VDS > 15V, IDS =3.5A ➃ IDSS Zero Gate Voltage Drain Current — — 2 5 VDS=800V, VGS=0V — — 250 VDS =800V VGS = 0V, TJ = 125°C IGSS Gate-to-Source Leakage Forward — — 100 VGS = 20V IGSS Gate-to-Source Leakage Reverse — — -100 VGS = -20V Qg Total Gate Charge 8 8 — 2 0 0 VGS= 10V, ID=5.6A Qgs Gate-to-Source Charge 8.8 — 2 0 nC VDS =500V Qgd Gate-to-Drain (‘Miller’) Charge 4 8 — 110 td(on) Turn-On Delay Time — — 3 0 VDD =400V*, ID =5.6A, t r Rise Time — — 4 4 RG =2.35Ω td(off) Turn-Off Delay Time — — 210 tf Fall Time — — 6 0 LS + LD Total Inductance — 6.1 — Ciss Input Capacitance — 2400 VGS = 0V, VDS = 25V Coss Output Capacitance — 240 — pF f = 1.0MHz Crss Reverse Transfer Capacitance — 8 0 — nA nH ns µA Ω Measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package) *Equipment Limitation |
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