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IRFB4110PBF Arkusz danych(PDF) 2 Page - International Rectifier |
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IRFB4110PBF Arkusz danych(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRFB4110PbF 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 28, 2014 Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 120A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 0.033mH RG = 25Ω, IAS = 108A, VGS =10V. Part not recommended for use above this value. S D G ISD ≤ 75A, di/dt ≤ 630A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400µs; duty cycle ≤ 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. When mounted on 1" square PCB (FR-4 or G-10 Material). For recom mended footprint and soldering techniques refer to application note #AN-994. Rθ is measured at TJ approximately 90°C. Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.108 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 3.7 4.5 m Ω VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V IDSS Drain-to-Source Leakage Current ––– ––– 20 µA ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units gfs Forward Transconductance 160 ––– ––– S Qg Total Gate Charge ––– 150 210 nC Qgs Gate-to-Source Charge ––– 35 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 43 ––– RG Gate Resistance ––– 1.3 ––– Ω td(on) Turn-On Delay Time ––– 25 ––– ns tr Rise Time ––– 67 ––– td(off) Turn-Off Delay Time ––– 78 ––– tf Fall Time ––– 88 ––– Ciss Input Capacitance ––– 9620 ––– pF Coss Output Capacitance ––– 670 ––– Crss Reverse Transfer Capacitance ––– 250 ––– Coss eff. (ER) Effective Output Capacitance (Energy Related)i ––– 820 ––– Coss eff. (TR) Effective Output Capacitance (Time Related)h ––– 950 ––– Diode Characteristics Symbol Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 170 A (Body Diode) ISM Pulsed Source Current ––– ––– 670 (Body Diode) Ãdi VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 50 75 ns TJ = 25°C VR = 85V, ––– 60 90 TJ = 125°C IF = 75A Qrr Reverse Recovery Charge ––– 94 140 nC TJ = 25°C di/dt = 100A/µs g ––– 140 210 TJ = 125°C IRRM Reverse Recovery Current ––– 3.5 ––– A TJ = 25°C ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) ID = 75A RG = 2.6Ω VGS = 10V g VDD = 65V TJ = 25°C, IS = 75A, VGS = 0V g integral reverse p-n junction diode. Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 5mAd VGS = 10V, ID = 75A g VDS = VGS, ID = 250µA VDS = 100V, VGS = 0V VDS = 100V, VGS = 0V, TJ = 125°C MOSFET symbol showing the VDS = 50V Conditions VGS = 10V g VGS = 0V VDS = 50V ƒ = 1.0MHz VGS = 0V, VDS = 0V to 80V j VGS = 0V, VDS = 0V to 80V h Conditions VDS = 50V, ID = 75A ID = 75A VGS = 20V VGS = -20V |
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